Characteristics study of ZnO ultraviolet sensor based on microcontact printing

SUN Yong-jiao; GAO Fan-qin; ZHAO Zhen-ting; ZHANG Wen-dong; HU Jie

doi:10.13873/j.1000-97872014.02.035

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Characteristics study of ZnO ultraviolet sensor based on microcontact printing

更新时间：2025-09-11

- Characteristics study of ZnO ultraviolet sensor based on microcontact printing
- Vol. 33, Issue 2, Pages: 50-53(2014)
- 作者机构：
  
  1. 太原理工大学微纳系统研究中心
  2. 太原理工大学新型传感器与智能控制教育部重点实验室
- 作者简介：
- 基金信息：
- DOI：10.13873/j.1000-97872014.02.035
  CLC： TP212
- Published：2014
- 稿件说明：
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[1]孙永娇,高翻琴,赵振廷,张文栋,胡杰.基于微接触印刷的ZnO紫外传感器特性研究[J].传感器与微系统,2014,33(02):50-53.

SUN Yong-jiao, GAO Fan-qin, ZHAO Zhen-ting, et al. Characteristics study of ZnO ultraviolet sensor based on microcontact printing[J]. 2014, 33(2): 50-53.
[1]孙永娇,高翻琴,赵振廷,张文栋,胡杰.基于微接触印刷的ZnO紫外传感器特性研究[J].传感器与微系统,2014,33(02):50-53. DOI： 10.13873/j.1000-97872014.02.035.

SUN Yong-jiao, GAO Fan-qin, ZHAO Zhen-ting, et al. Characteristics study of ZnO ultraviolet sensor based on microcontact printing[J]. 2014, 33(2): 50-53. DOI： 10.13873/j.1000-97872014.02.035.

摘要

采用微接触印刷技术和水热生长方法在硅基底上实现了ZnO种子层的图案化转移与纳米线阵列的可控制备。利用X射线衍射（XRD）、能量色散谱（EDS）和扫描电子显微镜（SEM）等测试手段对制备的ZnO纳米线晶体结构、化学组分以及表面形貌进行了表征

并对制备的ZnO纳米线传感器进行了紫外特性测试。测试结果表明:随着紫外光强度的增加

传感器的光暗电流比和光响应度也随之增加。当紫外传感器偏压在4.5 V时

其光暗电流比为80.8

响应度可达4.05 A/W。

Abstract

Microcontact printing technology is used to realize pattern transfer of ZnO seed layer and nanowire arrays are synthesized controllably by hydrothermal method on Si substrate.The crystal structure

chemical composition and morphology of ZnO nanowires are characterized with X-ray diffraction（XRD）

energy dispersive spectrometer（EDS） and scanning electron microscopy（SEM）

and properties of ultraviolet（UV） are also tested on the fabricated ZnO nanowire sensor.The measured results show that photocurrent / darkcurrent ratio and optical responsivity are enhanced with the increasing of UV intensity.When the sensor is at a bias of 4.5 V

its photocurrent / darkcurrent ratio and optical responsivity can reach 80.8 and 4.05 A / W.

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references

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