Anodic bonding of glass-silicon-glass three-layer structure with Si<sub>3</sub>N<sub>4</sub> thin film

LIN Zhi-xin1; WANG Sheng-gui2; LIU Qi2; ZENG Yi-bo2; GUO Hang1

doi:10.13873/j.1000-97872013.08.001

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Anodic bonding of glass-silicon-glass three-layer structure with Si₃N₄ thin film

更新时间：2025-09-11

- Anodic bonding of glass-silicon-glass three-layer structure with Si₃N₄ thin film
- Vol. 32, Issue 8, Pages: 63-66+70(2013)
- 作者机构：
  
  1. 厦门大学物理与机电工程学院
  2. 厦门大学萨本栋微米纳米技术研究院
- 作者简介：
- 基金信息：
- DOI：10.13873/j.1000-97872013.08.001
  CLC： O484
- Published：2013
- 稿件说明：
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[1]林智鑫,王盛贵,刘琦,曾毅波,郭航.带有Si_3N_4薄膜的玻璃-硅-玻璃三层结构的阳极键合[J].传感器与微系统,2013,32(08):63-66+70.

LIN Zhi-xin1, WANG Sheng-gui2, LIU Qi2, et al. Anodic bonding of glass-silicon-glass three-layer structure with Si₃N₄ thin film[J]. 2013, 32(8): 63-66+70.
[1]林智鑫,王盛贵,刘琦,曾毅波,郭航.带有Si_3N_4薄膜的玻璃-硅-玻璃三层结构的阳极键合[J].传感器与微系统,2013,32(08):63-66+70. DOI： 10.13873/j.1000-97872013.08.001.

LIN Zhi-xin1, WANG Sheng-gui2, LIU Qi2, et al. Anodic bonding of glass-silicon-glass three-layer structure with Si₃N₄ thin film[J]. 2013, 32(8): 63-66+70. DOI： 10.13873/j.1000-97872013.08.001.

摘要

为了获得高品质的带有Si3N4薄膜三层（玻璃—硅—玻璃）的阳极键合结构

对阳极键合的相关工艺参数进行了研究;设计搭建了实验平台并采用点阴极

以实时观察键合界面是否达到同形质的黑色从而判断阳极键合质量

对键合后的样品进行拉力测试

研究表明:当采用键合温度为400℃

电压为1200 V

压力为450 Pa

可获得键合面积大于90%的带有Si3N4薄膜的三层阳极键合结构。

Abstract

In order to obtain high quality of anodic bonding structure of glass-silicon-glass with Si3N4 thin film

related process parameters of anodic bonding is researched.Design and build up experimental platform and use point cathode to real-time observe whether if the bonding interface is black of the same character so as to judge quality of anodic bonding

and bonded samples are tested on tension.The research show that more than 90 % wafer area can be obtained for glass-silicon-silicon three-layer anodic bonding with Si3N4 structure when the voltage and pressure is 1 200V and 450 Pa respectively

at 400 ℃.

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references

Effect of deposition conditions on charging processes in SiN x : Application to RF-MEMS capacitive switches [J] . Richard Daigler,Eleni Papandreou,Matroni Koutsoureli,George Papaioannou,John Papapolymerou. Microelectronic Engineering . 2009 (3)

Anodic bonding of glass and silicon wafers with an intermediate silicon nitride film and its application to batch fabrication of SPM tip arrays [J] . Gen-Wen Hsieh,Ching-Hsiang Tsai,Wei-Chih Lin. Microelectronics Journal . 2005 (7)

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Anodic bonding of glass-silicon-glass three-layer structure with Si3N4 thin film

DOI：10.13873/j.1000-97872013.08.001

摘要

Abstract

关键词

Keywords

references

Anodic bonding of glass-silicon-glass three-layer structure with Si₃N₄ thin film