Mechanical simulation analysis on Si substrate bonding GaAs film

XUE Hui1; SHI Yun-bo1; GUO Hao1; TANG Jun1; LIU Jun1; DING Yu-kai1

doi:10.13873/j.1000-97872013.06.018

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Mechanical simulation analysis on Si substrate bonding GaAs film

更新时间：2025-09-11

- Mechanical simulation analysis on Si substrate bonding GaAs film
- Vol. 32, Issue 6, Pages: 53-55+59(2013)
- 作者机构：
  
  1. 中北大学仪器科学与动态测试教育部重点实验室
  2. 中北大学电子测试技术重点实验室
- 作者简介：
- 基金信息：
- DOI：10.13873/j.1000-97872013.06.018
  CLC： TN304
- Published：2013
- 稿件说明：
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[1]薛慧,石云波,郭浩,唐军,刘俊,丁宇凯.硅衬底键合砷化镓薄膜的力学仿真分析[J].传感器与微系统,2013,32(06):53-55+59.

XUE Hui1, SHI Yun-bo1, GUO Hao1, et al. Mechanical simulation analysis on Si substrate bonding GaAs film[J]. 2013, 32(6): 53-55+59.
[1]薛慧,石云波,郭浩,唐军,刘俊,丁宇凯.硅衬底键合砷化镓薄膜的力学仿真分析[J].传感器与微系统,2013,32(06):53-55+59. DOI： 10.13873/j.1000-97872013.06.018.

XUE Hui1, SHI Yun-bo1, GUO Hao1, et al. Mechanical simulation analysis on Si substrate bonding GaAs film[J]. 2013, 32(6): 53-55+59. DOI： 10.13873/j.1000-97872013.06.018.

摘要

采用介质键合技术制备的Si基GaAs材料衬底

缺陷密度小。对待键合的器件结构电学性能影响小。对采用目前常见的介质材料制备的Si基GaAs材料的力学性能进行了仿真分析

得到用于制备MEMS衬底的最佳介质键合层是SiO2

其衬底材料应力转换率高、量程大、位移小、制备工艺简单且为亲水性

制备的Si基GaAs衬底键合强度大

机械特性好。同时

对不同厚度的介质层材料对Si基GaAs材料的力学性能影响进行了研究分析

得到介质厚度越厚

其应力转换率越高

衬底材料的力敏效应就会越好。

Abstract

Si-based GaAs material substrate fabricated by medium bonding technology has low defect density

small effect on electrical property of the bonding device structure.Simulation analysis on mechanical characteristics of material is carried out.SiO2 is the best medium bonding layer for fabrication of MEMS substrate.The substrate material has high stress conversion rate

wide range

small displacement and simple fabrication process and is hydrophilic.The bond strength is strong and mechanical characteristics are good.Meanwhile

effect of different thickness of medium layer material on mechanical properties of Si-based GaAs material is researched.The more thicker the thickness of medium is

the higher stress conversion rate is

the better pressure sensitive effect is.

关键词

Keywords

references

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InP晶体合成、生长和特性 [D]. 孙聂枫. 天津大学 2008

低温晶片键合技术及长波长可调谐WDM解复用光接收集成器件的研究 [D]. 王文娟. 北京邮电大学 2007

GaAs基矢量水声传感器工艺设计及性能测试 [D]. 仝召民. 中北大学 2008

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High-lifetime GaAs on Si using GeSi buffers and its potential for space photovoltaics [J] . J.A Carlin,S.A Ringel,A Fitzgerald,M Bulsara. Solar Energy Materials and Solar Cells . 2001 (1)

High-quality GaAs-related lateral junctions on Si by conformal growth [J] . E. Gil-Lafon,A. Videcoq,J. Napierala,D. Castelluci,A. Pimpinelli,B. Gérard,J. Jimenez,M. Avella. Optical Materials . 2001 (1)

Growth of stress-reduced GaAs on Si substrate by using epitaxial lift-off and MOCVD regrowth [J] . T Soga,J Arokiaraj,H Taguchi,T Jimbo,M Umeno. Journal of Crystal Growth . 2000 (1)

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