High g<sub>n</sub> piezoresistive micro-accelerometer based on wafer level package using anode bonding

YUAN Ming-quan; SUN Yuan-cheng; ZHANG Qian-mei; WU Rui; QU Ming-shan; XIONG Yan-li

doi:10.13873/j.1000-97872013.05.023

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High g_n piezoresistive micro-accelerometer based on wafer level package using anode bonding

更新时间：2025-09-11

- High g_n piezoresistive micro-accelerometer based on wafer level package using anode bonding
- Vol. 32, Issue 5, Pages: 111-113+117(2013)
- 作者机构：
  
  中国工程物理研究院电子工程研究所
- 作者简介：
- 基金信息：
- DOI：10.13873/j.1000-97872013.05.023
  CLC： TN405
- Published：2013
- 稿件说明：
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[1]袁明权,孙远程,张茜梅,武蕊,屈明山,熊艳丽.基于圆片级阳极键合封装的高g_n值压阻式微加速度计[J].传感器与微系统,2013,32(05):111-113+117.

YUAN Ming-quan, SUN Yuan-cheng, ZHANG Qian-mei, et al. High g_n piezoresistive micro-accelerometer based on wafer level package using anode bonding[J]. 2013, 32(5): 111-113+117.
[1]袁明权,孙远程,张茜梅,武蕊,屈明山,熊艳丽.基于圆片级阳极键合封装的高g_n值压阻式微加速度计[J].传感器与微系统,2013,32(05):111-113+117. DOI： 10.13873/j.1000-97872013.05.023.

YUAN Ming-quan, SUN Yuan-cheng, ZHANG Qian-mei, et al. High g_n piezoresistive micro-accelerometer based on wafer level package using anode bonding[J]. 2013, 32(5): 111-113+117. DOI： 10.13873/j.1000-97872013.05.023.

摘要

设计了一种适合于高gn值压阻式微加速度计圆片级封装的结构

解决了芯片制造工艺过程中电极通道建立、焊盘保护、精确划片等关键技术。采用玻璃—硅—玻璃三层阳极键合的方式进行圆片级封装

较好地解决了芯片密封性、小型化和批量化等生产难题。在4 in生产线上制作的高gn值压阻式微加速度计样品

尺寸仅为1 mm×1 mm×0.8 mm;对传感器进行的校准与抗冲击性能测试

结果表明:样品具备105gn的抗冲击能力、0.15μV/gn/V的灵敏度以及200 kHz的谐振频率。

Abstract

A novel wafer level package structure for high gn piezoresistive micro-accelerometer application is presented.Some breakthroughs of a lot of key techniques such as electrons path building

protection of the pad

precise scribing is achieved in chip micro-fabrication process.The glass-Si-glass（GSG） triple stacks anodic bonding technology for the wafer level packaging is an effective way to solve some fabrication problems such as chip sealing performance

miniaturization and mass production.The high gn piezoresistive micro accelerometer prototype is fabricated in the 4 in MEMS production line

which has a very small dimension of 1mm ×1 mm×0.8 mm.The back to back impact test using the standard sensor shows that the piezoresistive micro-accelerometer prototype has anti-impact capability of 105 gn

the sensitivity is 0.151 2 μV/gn/V and the resonance frequency is 200 kHz.

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references

MEMS圆片级真空封装金硅键合工艺研究 [J]. 张卓,汪学方,王宇哲,刘川,刘胜. 电子与封装 . 2011(01)

一种便携式高g值冲击试验装置的设计 [J]. 王超,陈光焱,邓开举. 振动与冲击 . 2010(12)

一种基于BCB键合技术的新型MEMS圆片级封装工艺 [J]. 何洪涛. 微纳电子技术 . 2010(10)

高g值压阻式微加速度计设计（英文） [J]. 刘凤丽,郝永平. 光学精密工程 . 2009(06)

微机械高冲击传感器的一种失效模式研究 [J]. 孙远程,杨波,彭勃,赵龙,张茜梅. 传感技术学报 . 2006(05)

高量程MEMS加速度计封装研究 [D]. 蒋玉齐. 中国科学院研究生院（上海微系统与信息技术研究所） 2004

大过载压阻式加速度计设计、封装与测试 [D]. 杨杏敏. 中北大学 2011

MEMS圆片级芯片尺寸封装研究 [D]. 王玉传. 中国科学院研究生院（上海微系统与信息技术研究所） 2006

高g值硅微加速度计的结构设计与分析 [D]. 李伟. 南京理工大学 2005

微系统封装基础[M]. 东南大学出版社 , (美)RaoR.Tummala著, 2005

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High gn piezoresistive micro-accelerometer based on wafer level package using anode bonding

DOI：10.13873/j.1000-97872013.05.023

摘要

Abstract

关键词

Keywords

references

High g_n piezoresistive micro-accelerometer based on wafer level package using anode bonding