Mechanical simulation analysis of the Si epitaxial GaAs

TANG Jun1; GUO Hao1; LIU Jun1; ZHAO Rui1

doi:10.13873/j.1000-97872012.05.013

Chinese

您当前的位置：

首页 >

文章列表页 >

Mechanical simulation analysis of the Si epitaxial GaAs

更新时间：2025-09-11

- Mechanical simulation analysis of the Si epitaxial GaAs
- Vol. 31, Issue 5, Pages: 37-39+43(2012)
- 作者机构：
  
  1. 中北大学仪器科学与动态测试教育部重点实验室
  2. 中北大学电子测试技术国家重点实验室
- 作者简介：
- 基金信息：
- DOI：10.13873/j.1000-97872012.05.013
  CLC： TN304
- Published：2012
- 稿件说明：
移动端阅览
[1]唐军,郭浩,刘俊,赵锐.硅基外延GaAs材料的力学仿真分析[J].传感器与微系统,2012,31(05):37-39+43.

TANG Jun1, GUO Hao1, LIU Jun1, et al. Mechanical simulation analysis of the Si epitaxial GaAs[J]. 2012, 31(5): 37-39+43.
[1]唐军,郭浩,刘俊,赵锐.硅基外延GaAs材料的力学仿真分析[J].传感器与微系统,2012,31(05):37-39+43. DOI： 10.13873/j.1000-97872012.05.013.

TANG Jun1, GUO Hao1, LIU Jun1, et al. Mechanical simulation analysis of the Si epitaxial GaAs[J]. 2012, 31(5): 37-39+43. DOI： 10.13873/j.1000-97872012.05.013.

摘要

GaAs

Si基异质外延GaAs三种材料的基本力学特性各有不同

通过理论计算和ANSYS仿真得出相同条件下Si基异质外延GaAs材料中GaAs应力转化率是Si和GaAs材料的1.26倍左右

应力造成的位移系数略小于Si

远远小于GaAs

同时经过计算得出Si基异质外延GaAs材料的量程是GaAs材料的5倍

说明Si基外延GaAs材料不仅机械特性良好

而且还明显优于Si和GaAs

有更好的力电耦合效应需要的机械特性。

Abstract

The basic mechanical properties of materials of Si

GaAs and Si epitaxial GaAs are different.Using the theoretical calculation and ANSYS simulation the strain conversion rate of Si epitaxial GaAs is 1.26 times large than that of Si materials under the same conditions.The displacement coefficient is slightly less than Si

far less than GaAs materials.Meanwhile

the range of Si epitaxial GaAs is 5 times than GaAs materials by calculated.That means the mechanical properties of Si epitaxial GaAs is obviously better than the materials of Si and GaAs and a better force electric coupling effect.

关键词

Keywords

references

微机械陀螺封装应力研究 [J]. 李亚山,闫俊杰,刘俊,石云波. 传感器与微系统 . 2011(04)

GaAs基矢量水声传感器工艺设计及性能测试 [D]. 仝召民. 中北大学 2008

GaAs基共振隧穿压阻式加速度计研究 [D]. 陈建军. 中北大学 2006

High-lifetime GaAs on Si using GeSi buffers and its potential for space photovoltaics [J] . J.A Carlin,S.A Ringel,A Fitzgerald,M Bulsara. Solar Energy Materials and Solar Cells . 2001 (1)

High-quality GaAs-related lateral junctions on Si by conformal growth [J] . E. Gil-Lafon,A. Videcoq,J. Napierala,D. Castelluci,A. Pimpinelli,B. Gérard,J. Jimenez,M. Avella. Optical Materials . 2001 (1)

Growth of stress-reduced GaAs on Si substrate by using epitaxial lift-off and MOCVD regrowth [J] . T Soga,J Arokiaraj,H Taguchi,T Jimbo,M Umeno. Journal of Crystal Growth . 2000 (1)

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Mechanical simulation analysis on Si substrate bonding GaAs film

Related Author

XUE Hui1

SHI Yun-bo1

GUO Hao1

TANG Jun1

LIU Jun1

DING Yu-kai1

Related Institution

Key Laboratory of Instrumentation Science & Dynamic Measurement,Ministry of Education,North University of China

Science and Technology on Electronic Test & Measurement Laboratory,North University of China

⁰