Traditional piezoresistive detection of nano-resonators faces great challenges in fabricating resistance of high doping and shallow junction.A novel piezoresistive detecting scheme is proposed

in which substrate beneath depletion layers of MOS capacitors are used as piezoresistors to by pass these challenges.Thickness of 150nm silicon nano-beams are fabricated on silicon-on-insulator（SoI） substrate.In the aspect of detection

electromagnetic coupling interference problems are solved by designing package structure

to realize the weak signal detection of μV levels.The quality factor and resonant frequency of the resonators under normal pressure and at room temperature are 197 and 3.96 MHz respectively

and sensitivity on the output port is 0.73 mV/nm.