Effect of sputtering power on the properties of Al-doped ZnO films by RF magnetron sputtering

WU Yue-bo; LUO Min-xue; LEI Sheng; HUANG Lei

doi:10.13873/j.1000-97872011.06.003

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Effect of sputtering power on the properties of Al-doped ZnO films by RF magnetron sputtering

更新时间：2025-09-11

- Effect of sputtering power on the properties of Al-doped ZnO films by RF magnetron sputtering
- Vol. 30, Issue 6, Pages: 36-38(2011)
- 作者机构：
  
  安徽建筑工业学院机械与电气工程学院
- 作者简介：
- 基金信息：
- DOI：10.13873/j.1000-97872011.06.003
  CLC： O484.41
- Published：2011
- 稿件说明：
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[1]吴跃波,罗敏雪,雷声,黄磊.磁控溅射功率对掺Al氧化锌薄膜特性的影响[J].传感器与微系统,2011,30(06):36-38.

WU Yue-bo, LUO Min-xue, LEI Sheng, et al. Effect of sputtering power on the properties of Al-doped ZnO films by RF magnetron sputtering[J]. 2011, 30(6): 36-38.
[1]吴跃波,罗敏雪,雷声,黄磊.磁控溅射功率对掺Al氧化锌薄膜特性的影响[J].传感器与微系统,2011,30(06):36-38. DOI： 10.13873/j.1000-97872011.06.003.

WU Yue-bo, LUO Min-xue, LEI Sheng, et al. Effect of sputtering power on the properties of Al-doped ZnO films by RF magnetron sputtering[J]. 2011, 30(6): 36-38. DOI： 10.13873/j.1000-97872011.06.003.

摘要

利用射频磁控溅射技术在石英玻璃衬底上制备掺Al氧化锌（AZO）薄膜

研究了不同溅射功率（75

120

160

200 W）对AZO薄膜的结构、光学和电学特性的影响。结果表明:所制备的AZO薄膜具有良好的c轴择优取向

且随着溅射功率的增加

薄膜的表面颗粒尺寸逐渐增加;薄膜在可见光范围具有较高的透射率

吸收边在350～400 nm波段;随着溅射功率的增加

载流子浓度和迁移率逐渐增大

电阻率逐渐下降。

Abstract

The Al-doped ZnO（AZO） films are deposited on glass using RF magnetron sputtering technology under different sputtering power:75

120

160

200 W.The effect of sputtering power on the structural

optical and electrical properties of the AZO films is investigated.The results indicate each of the films has a preferential c-axis orientation and the surface grain size increases with sputtering power increasing.All the films exhibit a high transmittance in visible region and have sharp fundamental absorption edge in the wavelength range of 350

00 nm.The resistivity decreases as sputtering power increases

both carrier concentration and Hall mobility increase.

关键词

Keywords

references

Effect of annealing treatment on the structural, optical, and electrical properties of Al-doped ZnO thin films [J]. LI Li1), FANG Liang2), CHEN Ximing1), LIU Gaobin2), LIU Jun1), YANG Fengfan2), FU Guangzong2), and KONG Chunyang3) 1) College of Photoelectric Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China 2) Department of Applied Physics, Chongqing University, Chongqing 400044, China 3) Department of Physics, Chongqing Normal University, Chongqing 400047, China. Rare Metals . 2007(03)

掺杂透明导电半导体薄膜的光电性能研究 [J]. 葛春桥,郭爱云,胡小峰. 应用光学 . 2006(01)

RF磁控溅射法制备ZnO薄膜的XRD分析 [J]. 汪冬梅,吕珺,陈长奇,吴玉程,郑治祥. 理化检验(物理分册) . 2006(01)

Effects of rf power on surface-morphological, structural and electrical properties of aluminium-doped zinc oxide films by magnetron sputtering [J] . Dengyuan Song. Applied Surface Science . 2008 (13)

Effect of oxygen partial pressure on the structural and optical properties of ZnO film deposited by reactive sputtering [J] . J.P. Zhang,G. He,L.Q. Zhu,M. Liu,S.S. Pan,L.D. Zhang. Applied Surface Science . 2007 (24)

Effect of alumina doping on structural, electrical, and optical properties of sputtered ZnO thin films [J] . S.N. Bai,T.Y. Tseng. Thin Solid Films . 2006 (3)

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