Design of displacement transducer based on resonant tunneling film

ZHANG Qing-wei; WEN Ting-dun

doi:10.13873/j.1000-97872009.02.028

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Design of displacement transducer based on resonant tunneling film

更新时间：2025-09-11

- Design of displacement transducer based on resonant tunneling film
- Vol. 28, Issue 2, Pages: 66-67(2009)
- 作者机构：
  
  中北大学微米纳米技术研究中心
- 作者简介：
- 基金信息：
- DOI：10.13873/j.1000-97872009.02.028
  CLC： TP212
- Published：2009
- 稿件说明：
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[1]张庆伟,温廷敦.基于共振隧穿的位移传感器设计[J].传感器与微系统,2009,28(02):66-67.

ZHANG Qing-wei, WEN Ting-dun. Design of displacement transducer based on resonant tunneling film[J]. 2009, 28(2): 66-67.
[1]张庆伟,温廷敦.基于共振隧穿的位移传感器设计[J].传感器与微系统,2009,28(02):66-67. DOI： 10.13873/j.1000-97872009.02.028.

ZHANG Qing-wei, WEN Ting-dun. Design of displacement transducer based on resonant tunneling film[J]. 2009, 28(2): 66-67. DOI： 10.13873/j.1000-97872009.02.028.

摘要

运用了一种新效应——介观压阻效应

以A lAs/GaAs/A lAs共振隧穿双势垒（DBRT）结构薄膜作为力敏元件

设计了一种压阻式微位移传感器。通过分析、计算和模拟得到了它的输入、输出特性和灵敏度

把它与同类传感器做了比较

结果显示:DBRT结构可以提高灵敏度、调节灵敏度。为设计介观压阻式微位移传感器提供了理论依据。

Abstract

A new effect—meso-piezoresistive effect is used

took GaAs/AlAs/InGaAs double-barrier resonant tunneling（DBRT）film as stress sensitive component

a piezoresistive micro-displacement transducer is designed.Its in-out characteristic and sensitivity are obtained by analysis

calculation and simulation

it is compared with congeneric sensor.The results show that the double-barrier resonant tunneling may promote and adjust sensitivity.It offers a theory basis for devising meso-piezoresistive micro-displacement transducers.

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references

GaAs微结构中共振隧穿薄膜介观压阻效应研究 [J]. 王建,张文栋,薛晨阳,熊继军,张斌珍. 半导体技术 . 2006(09)

介观压阻效应 [J]. 温廷敦,张文栋. 微纳电子技术 . 2003(Z1)

传感器原理[M]. 科学出版社 , 田裕鹏, 2007

传感器原理及应用[M]. 国防工业出版社 , 朱蕴璞,孔德仁,王芳编著, 2005

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