A novel process of fabricating sub-micro beams with contactless electrochemical etch-stop technique is presented.The etch-stop is realized by changing exposed etching area of the device according to the characteristic of anistropic etching of silicon and the reqirement of Au/Si etch-stop.The sub-micro beam with the thickness of 235nm is formed on（111） wafer with the galvanic cell passivation

which is insulated from substrate and supported by the Au electrode with 4μm thickness.This is a promising process with easy fabrication steps

high yield

low cost and wide appilication.