Research on low-voltage APS based on 0.25μm technology

LI Xiao-lei1; ZENG Yun1; ZHANG Guo-liang1; PENG Yan1; WANG Tai-hong1

doi:10.13873/j.1000-97872008.06.021

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Research on low-voltage APS based on 0.25μm technology

更新时间：2025-09-11

- Research on low-voltage APS based on 0.25μm technology
- Issue 6, Pages: 15-17(2008)
- 作者机构：
  
  湖南大学微电子研究所
- 作者简介：
- 基金信息：
- DOI：10.13873/j.1000-97872008.06.021
  CLC： TP212
- Published：2008
- 稿件说明：
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[1]李晓磊,曾云,张国樑,彭琰,王太宏.基于0.25μm工艺的低压有源像素传感器研究[J].传感器与微系统,2008(06):15-17.

LI Xiao-lei1, ZENG Yun1, ZHANG Guo-liang1, et al. Research on low-voltage APS based on 0.25μm technology[J]. 2008, (6): 15-17.
[1]李晓磊,曾云,张国樑,彭琰,王太宏.基于0.25μm工艺的低压有源像素传感器研究[J].传感器与微系统,2008(06):15-17. DOI： 10.13873/j.1000-97872008.06.021.

LI Xiao-lei1, ZENG Yun1, ZHANG Guo-liang1, et al. Research on low-voltage APS based on 0.25μm technology[J]. 2008, (6): 15-17. DOI： 10.13873/j.1000-97872008.06.021.

摘要

提出了用PMOSFET代替传统的有源像素传感器（APS）中的NMOSFET作为复位晶体管

优化设计CMOS有源像素图像传感器

用0.25μm CMOS工艺进行仿真

结果表明:在相同的条件下

这种器件比传统APS拥有更高的信噪比、更大的输出电压摆幅、更大的动态范围和更快的读出速度。

Abstract

That a PMOSFET is used to substitute the NMOSFET in APS as reset transistor is presented.By optimizing and simulating based on the 0.25μm CMOS technology

the results show that the new structure has higher signal-to-noise ratio

wider output swing

wider dynamic range and faster readout speed under the same condition.

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