Model for CMOS SnO<sub>2</sub> gas sensor and heating simulation

XI Cai-hong; LIU Su

doi:10.13873/j.1000-97872008.04.030

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Model for CMOS SnO₂ gas sensor and heating simulation

更新时间：2025-09-11

- Model for CMOS SnO₂ gas sensor and heating simulation
- Issue 4, Pages: 71-73(2008)
- 作者机构：
  
  1. 兰州大学物理科学与技术学院
  2. 兰州大学物理科学与技术学院,甘肃,兰州,730000
- 作者简介：
- 基金信息：
- DOI：10.13873/j.1000-97872008.04.030
  CLC： TP212
- Published：2008
- 稿件说明：
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[1]席彩红,刘肃.CMOS SnO_2气体传感器模型与热仿真[J].传感器与微系统,2008(04):71-73.

XI Cai-hong, LIU Su. Model for CMOS SnO₂ gas sensor and heating simulation[J]. 2008, (4): 71-73.
[1]席彩红,刘肃.CMOS SnO_2气体传感器模型与热仿真[J].传感器与微系统,2008(04):71-73. DOI： 10.13873/j.1000-97872008.04.030.

XI Cai-hong, LIU Su. Model for CMOS SnO₂ gas sensor and heating simulation[J]. 2008, (4): 71-73. DOI： 10.13873/j.1000-97872008.04.030.

摘要

为了分析CMOS SnO2气体传感器的工作

有必要建立合适的模型

采用晶粒边界的肖特基势垒模型和固体表面对气体的Freund lich等温吸附很好地解释了SnO2的电导与检测气体体积分数工作温度之间的关系

利用ANSYS 7.0对实际设计的传感器进行了热仿真

这便于在CMOS后加工工艺中很好地对其控制。

Abstract

It is necessary to develop a reasonable model in order to understand the sensing mechanism of CMOS SnO2 gas sensor.The Schottky-barrier of crystalloid and Freundlich adsorption isotherm on solid surface are used to explains the relation between SnO2 conductance and the volume fraction on tested gas and the operating temperature.The designed sensor’ heating behavior is simulated by ANSYS 7.0.Post

MOS and operating temperature can be controlled.

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New method for reconstruction of SnO₂ signals based on detect of discrete points and wavelet transform

Related Author

ZHANG Xi-xian1

CHEN Lian2

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Anhui Institute of Optics and Fine Mechanics,Chinese Academy of Sciences

The China University of Political Science and Law

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Model for CMOS SnO2 gas sensor and heating simulation

DOI：10.13873/j.1000-97872008.04.030

摘要

Abstract

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references

Model for CMOS SnO₂ gas sensor and heating simulation