Progress in optical waveguide fabrication based on electron beam irradiation

WANG Zheng-ping1; ZHANG Guo-sheng1; MA Ren-de1; WANG Cheng1; ZHANG Yu-bao3

doi:10.13873/j.1000-97872007.07.029

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Progress in optical waveguide fabrication based on electron beam irradiation

更新时间：2025-09-11

- Progress in optical waveguide fabrication based on electron beam irradiation
- Issue 7, Pages: 4-6(2007)
- 作者机构：
  
  1. 哈尔滨工程大学理学院
  2. 黑龙江省科学院技术物理研究所,黑龙江,哈尔滨,150001
  3. 北京印刷学院
  4. ,黑龙江,哈尔滨,150086
- 作者简介：
- 基金信息：
- DOI：10.13873/j.1000-97872007.07.029
  CLC： TN252
- Published：2007
- 稿件说明：
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[1]王政平,张国生,马任德,王成,张玉宝.电子束辐照制作光波导技术研究进展[J].传感器与微系统,2007(07):4-6.

WANG Zheng-ping1, ZHANG Guo-sheng1, MA Ren-de1, et al. Progress in optical waveguide fabrication based on electron beam irradiation[J]. 2007, (7): 4-6.
[1]王政平,张国生,马任德,王成,张玉宝.电子束辐照制作光波导技术研究进展[J].传感器与微系统,2007(07):4-6. DOI： 10.13873/j.1000-97872007.07.029.

WANG Zheng-ping1, ZHANG Guo-sheng1, MA Ren-de1, et al. Progress in optical waveguide fabrication based on electron beam irradiation[J]. 2007, (7): 4-6. DOI： 10.13873/j.1000-97872007.07.029.

摘要

概述了采用电子束辐照制作光波导技术的研究历史

给出电子辐照对S iO2产生作用的机理、样品中原子错位的阈值、电子辐照深度的计算方法

分析了不同能量电子辐照产生折射率变化的原因

给出了低能电子辐照导致S iO2折射率变化的计算及测量方法

介绍了用电子束辐照制作光波导的进展。

Abstract

The research history on the fabrication of optical waveguide based on electron beam irradiation is reviewed

the mechansm of the effects of electron irradiation upon SiO2 materials

the electron energy threshold values for forming atom displacement in irradiated materials and the computational methods of irradiation depths are introduced.The reasons of refractive indices variations after irradiations with different electron energies are analyzed.The methods of calculation and measurement of the refractive indices variations in SiO2 materials induced by low energy electron irradiations are given.The progress in optical waveguide fabrication based on electron beam irradiation is introduced.

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references

工业电子加速器及其在辐射加工中的应用[M]. 原子能出版社 , (苏)Е.А.阿布拉勉[Е.А.Абрамян]著, 1996

Investigation of structural change caused by UV irradiation of hydrogen-loaded Ge-doped core fiber [J] . J.-W. Hong,S.-R. Ryu,M. Tomozawa,Q. Chen. Journal of Non-Crystalline Solids . 2004

Dependence on Ge doping of specific volume change in silica induced by electron-beam irradiation [J] . A.-S. Jacqueline,S. Garcia-Blanco,B. Poumellec,J.S. Aitchison. Journal of Non-Crystalline Solids . 2003 (1)

An algorithm for depth–dose curves of electrons fitted to Monte Carlo data [J] . Tatsuo Tabata,Pedro Andreo,Kunihiko Shinoda. Radiation Physics and Chemistry . 1998 (3)

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Related Author

ZANG Jun-bin1

XUE Chen-yang1

JIN Yu-jian1

TONG Xiao-gang1

WEI Li-ping1

LIU Chao1

Related Institution

National Key Laboratory for and Electronic Measurement Technology,North University of China

Key Laboratory of Instrumentation Science & Dynamic Measurement Ministry of Education, North University of China

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