Research on Golay-cell type infrared detector based on MEMS

GAO Xiang1; XU Jing1; ZHAO Ben-gang1; WAN Zhu-jun1; WU Ya-ming1

doi:10.13873/j.1000-97872007.03.006

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Research on Golay-cell type infrared detector based on MEMS

更新时间：2025-09-11

- Research on Golay-cell type infrared detector based on MEMS
- Issue 3, Pages: 20-23(2007)
- 作者机构：
  
  1. 中国科学院上海微系统与信息技术研究所传感技术国家重点实验室
  2. 中国科学院上海微系统与信息技术研究所传感技术国家重点实验室,上海,200050
  3. 中国科学院研究生院
  4. ,北京,100039
- 作者简介：
- 基金信息：
- DOI：10.13873/j.1000-97872007.03.006
  CLC： TN215
- Published：2007
- 稿件说明：
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[1]高翔,徐静,赵本刚,万助军,吴亚明.微机械Golay腔型红外探测器的研究[J].传感器与微系统,2007(03):20-23.

GAO Xiang1, XU Jing1, ZHAO Ben-gang1, et al. Research on Golay-cell type infrared detector based on MEMS[J]. 2007, (3): 20-23.
[1]高翔,徐静,赵本刚,万助军,吴亚明.微机械Golay腔型红外探测器的研究[J].传感器与微系统,2007(03):20-23. DOI： 10.13873/j.1000-97872007.03.006.

GAO Xiang1, XU Jing1, ZHAO Ben-gang1, et al. Research on Golay-cell type infrared detector based on MEMS[J]. 2007, (3): 20-23. DOI： 10.13873/j.1000-97872007.03.006.

摘要

通过分析微机械Golay腔型红外探测器设计中影响性能的关键因素:温致压变系数、红外吸收层、阻尼噪声

提出了一种采用硅和玻璃阳极键合技术实现的新型Golay腔型红外探测器。计算其灵敏度为2 700 pF/W、噪声等效功率为8.4×10-8W/Hz1/2和响应时间为0.5m s。利用光学测量变形

可以实现探测器无电化设计

使得测量不受强电磁场和湿度的影响。

Abstract

The key factors are analyzed in designing a micromachined infrared detector based on the principle of the Golay cell

including thermal-pressure coefficient

infrared absorption layer and damping noise.A new prototype with Si-glass anodic bonding technology is presented.The device sensitivity is 2 700 pF/W

noise equivalent power is 8.4×10-8W/Hz1/2 and response time is 0.5 ms.With optical displacement meter

non-electricity detection can be realized

which helps to avoid the effect of strong electromagnetic field and humidity.

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