Research on models and measuring circuits of ISFET compatible with CMOS technology

WANG Yang; LIU Gao-ping; GUO Feng; YIN Xiang-yuan

doi:10.13873/j.1000-97872007.02.006

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Research on models and measuring circuits of ISFET compatible with CMOS technology

更新时间：2025-09-11

- Research on models and measuring circuits of ISFET compatible with CMOS technology
- Issue 2, Pages: 19-20+24(2007)
- 作者机构：
  
  1. 浙江万里学院电信学院
  2. 浙江万里学院电信学院,浙江,宁波,315100
- 作者简介：
- 基金信息：
- DOI：10.13873/j.1000-97872007.02.006
  CLC： TP212.1
- Published：2007
- 稿件说明：
移动端阅览
[1]王阳,刘高平,郭锋,尹湘源.CMOS兼容的ISFET传感器模型和测量电路研究[J].传感器与微系统,2007(02):19-20+24.

WANG Yang, LIU Gao-ping, GUO Feng, et al. Research on models and measuring circuits of ISFET compatible with CMOS technology[J]. 2007, (2): 19-20+24.
[1]王阳,刘高平,郭锋,尹湘源.CMOS兼容的ISFET传感器模型和测量电路研究[J].传感器与微系统,2007(02):19-20+24. DOI： 10.13873/j.1000-97872007.02.006.

WANG Yang, LIU Gao-ping, GUO Feng, et al. Research on models and measuring circuits of ISFET compatible with CMOS technology[J]. 2007, (2): 19-20+24. DOI： 10.13873/j.1000-97872007.02.006.

摘要

随着CMOS工艺的不断发展

将离子敏场效应晶体管（ISFET）传感器与CMOS技术相结合

以达到提高集成度、降低成本、减小系统尺寸、提高系统可靠性。在对与CMOS工艺兼容的ISFET传感器结构模型分析的基础上

研究了一种测量电路

它具有有利于消除体效应的影响、减少共模噪声的影响、克服温度漂移等优点。对该测量电路进行模拟仿真

得到输出电压与pH值之间的关系图

结果表明:其结果与理论模型仿真值基本吻合。

Abstract

With the development of CMOS

ion sensitive field effect transistor（ISFET） is combined with CMOS technology to increase integration

decrease price

deduce the system size

improve the system properties and so on.Based on analyzing structures of ISFET sensors compatible with CMOS technology

a kind of measuring circuits is researched.It can reduce body effect

common modle noise

temperature drift and so on.A kind of ISFET measuring circuits is simulated.Relation pattern of output voltage and pH value is similar with the result of theoretical model.

关键词

Keywords

references

CMOS离子敏场效应管SPICE模型 [J]. 刘肃,韩富强,于峰崎. 传感器技术 . 2005(10)

CMOS技术在生物传感器中的应用 [J]. 杨振,颜永红,齐良颉. 微纳电子技术 . 2004(01)

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