Equivalent model for vanadium oxide thin film uncooled infrared detector

LI Wen-mu; CHEN Xiang-dong; DUAN Xiao-feng

doi:10.13873/j.1000-97872006.09.016

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Equivalent model for vanadium oxide thin film uncooled infrared detector

更新时间：2025-09-11

- Equivalent model for vanadium oxide thin film uncooled infrared detector
- Issue 9, Pages: 49-51+54(2006)
- 作者机构：
  
  1. 西南交通大学信息科学与技术学院
  2. 西南交通大学信息科学与技术学院,四川,成都,610031
- 作者简介：
- 基金信息：
- DOI：10.13873/j.1000-97872006.09.016
  CLC： TN215
- Published：2006
- 稿件说明：
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[1]黎文模,陈向东,段晓峰.氧化钒热敏薄膜非致冷红外探测器的等效模型[J].传感器与微系统,2006(09):49-51+54.

LI Wen-mu, CHEN Xiang-dong, DUAN Xiao-feng. Equivalent model for vanadium oxide thin film uncooled infrared detector[J]. 2006, (9): 49-51+54.
[1]黎文模,陈向东,段晓峰.氧化钒热敏薄膜非致冷红外探测器的等效模型[J].传感器与微系统,2006(09):49-51+54. DOI： 10.13873/j.1000-97872006.09.016.

LI Wen-mu, CHEN Xiang-dong, DUAN Xiao-feng. Equivalent model for vanadium oxide thin film uncooled infrared detector[J]. 2006, (9): 49-51+54. DOI： 10.13873/j.1000-97872006.09.016.

摘要

建立了氧化钒热敏薄膜微测辐射热计的PSPICE模型

结合一个具体的CMOS读出电路给出探测器的等效电路模型

分析了探测器的电学和噪声特性

根据等效模型基于微测辐射热计电阻RD和读出电路MOS沟道宽度2个设计参数对噪声等效温差（NETD）进行了优化

优化数据表明:参数RD取值为2

1 kΩ

W取值为0.1

.0μm时

得到的NETD值为0.133 4

.188 5 K。

Abstract

A PSPICE model for vanadium oxide microbolometer is presented.On the basis of this model combining with a CMOS readout circuit

a equivalent circuit model of infrared detector is established.The electricity and noise characteristics of the model are analysed.Finally noise equivalent temperature different（NETD） is optimized based on two important design parameters;microbolometer resistance R

and MOS channel width W.The optimized data shows that when R

is chosen from 2

1 kΩ and W is chosen from 0.1

.0 μm

NETD is realized between 0.133 4

.188 5 K.

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references

用于微测辐射热计的氧化矾热敏材料的温度特性 [J]. 曹永峰,蒋玉龙,段鹏,茹国平,李炳宗,陈永平. 半导体技术 . 2002(05)

Summary of thermal, shot and flicker noise in detectors and readout circuits [J] . P. Seller. Nuclear Inst. and Methods in Physics Research, A . 1999 (2)

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