Application of wafer-level laminated bonding technology in SOI high-temperature pressure sensor

QI Hong; DING Wen-bo; ZHANG Song; ZHANG Lin-chao; TIAN Lei; WU Zuo-fei

doi:10.13873/j.1000-9787(2019)02-0154-03

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Application of wafer-level laminated bonding technology in SOI high-temperature pressure sensor

更新时间：2025-09-11

- Application of wafer-level laminated bonding technology in SOI high-temperature pressure sensor
- Issue 2, Pages: 154-156+160(2019)
- 作者机构：
  
  1. 中国电子科技集团公司第四十九研究所
  2. 火箭军驻哈尔滨地区军事代表室
- 作者简介：
- 基金信息：
- DOI：10.13873/j.1000-9787(2019)02-0154-03
  CLC： TP212
- Published：2019
- 稿件说明：
移动端阅览
QI Hong, DING Wen-bo, ZHANG Song, et al. Application of wafer-level laminated bonding technology in SOI high-temperature pressure sensor[J]. 2019, (2): 154-156+160.
DOI：

QI Hong, DING Wen-bo, ZHANG Song, et al. Application of wafer-level laminated bonding technology in SOI high-temperature pressure sensor[J]. 2019, (2): 154-156+160. DOI： 10.13873/j.1000-9787(2019)02-0154-03.

摘要

针对绝缘体上硅（SOI）异质异构结构特点

提出了两次对准和两次阳极键合工艺方法

实现了圆片级SOI高温压力传感器硅敏感芯片的叠层键合。采用玻璃—硅—玻璃三层结构的SOI压力芯片具有良好的密封性和键合强度。经测试结果表明:SOI高温压力传感器芯片键合界面均匀平整无缺陷

漏率低于5×10

-9

Pa·m

键合强度大于3 MPa。对芯片进行无引线封装

在500℃下测试得出传感器总精度小于0. 5%FS。

Abstract

Aiming at the heterogeneous structural characteristics of silicon on insulator（ SOI）

a technique of twice alignment and twice anode bonding is proposed

to achieve laminated bonding of silicon sensitive chip of wafer-level SOI high temperature pressure sensor. SOI pressure chip with three-layer structure of glass-silicon-glass has good sealing and bonding strength. After testing

bonding interface of SOI high temperature pressure sensor chip is uniform

formation without defects

leak rate is below 5 × 10

-9

Pa·m~3/s

bonding strength is over 3 MPa.And the chip is packaged without lead

it is obtained by test that the total precision of the sensor is less than0. 5 % FS in 500 ℃.

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