A silicon on insulator（SOI） high temperature piezoresistive pressure sensor chip is researched and fabricated based on micro-electro-mechanical system（MEMS） technology. The pressure sensitive resistors are isolated by Si O2 from the silicon substrate to solve current leakage problem of the traditional PN junction isolated type in high temperature.The pressure range of the developed high temperature pressure sensor chip is 0

2 MPa

the full scale output is more than 100 m V with 1 m A at room temperature

the non-linearity is less than 0.15 %FS

the pressure hysteresis is less than 0. 05 % FS. In the operating temperature range from-55 ℃ to 150 ℃

the temperature coefficient of zero-point is less than 20 μV/℃

the temperature coeffi

cient of sensitivity is less than0.02 %FS/℃

the zero-point temperature hysteresis is less than 0. 1 % FS. The short time zero-point drift test is carried out to verify its stability

the result is prior to 0.05 %FS in 150 ℃ condition.