Research on residual stress of anodic bonding process of SOI pressure sensor

LI Yu-ling; WANG Ming-wei; ZHANG Lin-chao; WU Zuo-fei

doi:10.13873/j.1000-9787(2018)11-0018-03

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Research on residual stress of anodic bonding process of SOI pressure sensor

更新时间：2025-09-11

- Research on residual stress of anodic bonding process of SOI pressure sensor
- Vol. 37, Issue 11, Pages: 18-20(2018)
- 作者机构：
  
  中国电子科技集团公司第四十九研究所
- 作者简介：
- 基金信息：
- DOI：10.13873/j.1000-9787(2018)11-0018-03
  CLC： TP212
- Published：2018
- 稿件说明：
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[1]李玉玲,王明伟,张林超,吴佐飞.SOI压力传感器阳极键合残余应力研究[J].传感器与微系统,2018,37(11):18-20.

LI Yu-ling, WANG Ming-wei, ZHANG Lin-chao, et al. Research on residual stress of anodic bonding process of SOI pressure sensor[J]. 2018, 37(11): 18-20.
[1]李玉玲,王明伟,张林超,吴佐飞.SOI压力传感器阳极键合残余应力研究[J].传感器与微系统,2018,37(11):18-20. DOI： 10.13873/j.1000-9787(2018)11-0018-03.

LI Yu-ling, WANG Ming-wei, ZHANG Lin-chao, et al. Research on residual stress of anodic bonding process of SOI pressure sensor[J]. 2018, 37(11): 18-20. DOI： 10.13873/j.1000-9787(2018)11-0018-03.

摘要

绝缘体上硅（SOI）压力传感器通常采用阳极键合实现圆片级气密封装

硅片和硼硅玻璃片通过阳极键合技术在360℃左右形成可靠的结合。硅片和硼硅玻璃片的热膨胀系数不能完全匹配

降温后的硅—玻璃圆片必然会存在残余应力。残余应力直接影响传感器性能、稳定性和可靠性。建立了残余应力计算模型

分析了残余应力与硼硅玻璃片厚度的关系;完成了键合试验

通过测量圆片曲率半径得到了弯曲应力的量值

验证了通过调整玻璃片厚度实现应力匹配的方法。样品测试结果表明:通过应力匹配减小了工艺残余应力

有效提高了压力传感器的长期稳定性。

Abstract

Anodic bonding is usually adopted in wafer level airtight packaging of silicon on insulator（SOI）pressure sensor.At about 360 ℃

by anodic bonding technology

reliable combination of silicon and borosilicate glass is formed.The thermal expansion coefficient of silicon and borosilicate glass cannot match completely

so the silicon-glass wafer will inevitably has residual stress after cooling. The residual stress directly affects the performance such as stability and reliability of the sensor.A calculating model for the residual stress is established

and the relationship between the residual stress and the thickness of borosilicate glass sheet is analyzed. The bonding experiment is completed

the value of bending stress is obtained by measuring the radius of curvature of the wafer

and the stress matching realization method is verified by adjusting the thickness of the glass sheet.Sample test results show that the residual stress is reduced by stress matching and stability is improved.

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references

阳极键合研究现状及影响因素 [J]. 杜超,刘翠荣,阴旭,赵浩成. 材料科学与工艺 . 2018(05)

无引线封装高温压力传感器 [J]. 田雷,尹延昭,苗欣,吴佐飞. 半导体技术 . 2014(12)

充油式高温高压温度压力复合传感器 [J]. 田雷,刘智辉,李海博,尹延召. 微纳电子技术 . 2013(12)

硅压力传感器中硅玻璃阳极键合的热应力分析 [J]. 张强,王鸣,戎华. 光学与光电技术 . 2009(03)

晶圆键合手册[M]. 国防工业出版社 , 彼得·拉姆, 2016

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