Research on Si-Si bonding technique with photosensitive BCB for MEMS devices

ZHAO Lu-bing; XU Jing; ZHONG Shao-long; LI Shao-liang; WU Ya-ming

doi:10.13873/j.1000-9787(2014)08-0048-04

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Research on Si-Si bonding technique with photosensitive BCB for MEMS devices

更新时间：2025-09-11

- Research on Si-Si bonding technique with photosensitive BCB for MEMS devices
- Vol. 33, Issue 8, Pages: 48-51(2014)
- 作者机构：
  
  1. 中国科学院上海微系统与信息技术研究所传感技术联合国家重点实验室
  2. 中国科学院大学
- 作者简介：
- 基金信息：
- DOI：10.13873/j.1000-9787(2014)08-0048-04
  CLC： TN305
- Published：2014
- 稿件说明：
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[1]赵璐冰,徐静,钟少龙,李绍良,吴亚明.MEMS光敏BCB硅—硅键合工艺研究[J].传感器与微系统,2014,33(08):48-51.

ZHAO Lu-bing, XU Jing, ZHONG Shao-long, et al. Research on Si-Si bonding technique with photosensitive BCB for MEMS devices[J]. 2014, 33(8): 48-51.
[1]赵璐冰,徐静,钟少龙,李绍良,吴亚明.MEMS光敏BCB硅—硅键合工艺研究[J].传感器与微系统,2014,33(08):48-51. DOI： 10.13873/j.1000-9787(2014)08-0048-04.

ZHAO Lu-bing, XU Jing, ZHONG Shao-long, et al. Research on Si-Si bonding technique with photosensitive BCB for MEMS devices[J]. 2014, 33(8): 48-51. DOI： 10.13873/j.1000-9787(2014)08-0048-04.

摘要

光敏BCB作为粘结介质进行键合工艺实验研究。实验中选用XUS35078负性光敏BCB

提出了优化的光刻工艺参数

得到了所需要的BCB图形层

然后将两硅片在特定的温度与压力条件下完成了BCB键合。测试表明:该光敏BCB具有较小的流动性和较低的塌陷率。键合后的BCB胶厚约为11.6μm

剪切强度为18MPa

He细检漏率小于5.0×10-8atm·cm3/s。此键合工艺可应用于制作需要低温工艺且不能承受高电压的MEMS器件。

Abstract

A kind of bonding technique with photosensitive benzo-cyclo-butene（BCB） is presented.In our experiments

by employing a kind of negative photosensitive BCB（XUS35078） and optimizing photolithography parameters

well-patterned BCB is obtained

then BCB bonding is carried out under particular temperature and pressure.Test shows that the BCB shows low flow characteristic and collapsing rate.The thickness of BCB photoresist after bonding is 11.6 μm

shear strength of each cell is 18 MPa

and hermeticity is better than 5.0 ×10-8atm· cm3/s He.This bonding process can be applied for production of MEMS devices which needs low temperature process and cannot bear high voltage.

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references

基于BCB键合的MEMS加速度计圆片级封装工艺 [J]. 刘磊,展明浩,李苏苏,陈博. 电子科技 . 2012(09)

一种基于BCB键合技术的新型MEMS圆片级封装工艺 [J]. 何洪涛. 微纳电子技术 . 2010(10)

用苯并环丁烯进行圆片级硅–硅气密性键合 [J]. 刘玉菲,李四华,吴亚明. 电子元件与材料 . 2006(02)

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