基于E-J模型的超导/TMR复合磁传感器设计与实现

doi:10.13873/J.1000-9787(2023)07-0074-04

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基于E-J模型的超导/TMR复合磁传感器设计与实现

更新时间：2025-09-11

- 基于E-J模型的超导/TMR复合磁传感器设计与实现
- Issue 7, Pages: 74-77(2023)
- 作者机构：
  
  国防科技大学智能科学学院
- 作者简介：
- 基金信息：
- DOI：10.13873/J.1000-9787(2023)07-0074-04
  CLC： TP212
- Published：2023
- 稿件说明：
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[J]. 2023, (7): 74-77.
DOI：

[J]. 2023, (7): 74-77. DOI： 10.13873/J.1000-9787(2023)07-0074-04.

摘要

超导/隧道磁电阻(TMR)复合磁传感器具有fT级磁场测量能力，在弱磁探测领域展现出巨大应用潜力。本文基于超导材料的E-J幂指数模型，建立了超导磁放大器的COMSOL有限元仿真方法，并利用该方法研究了超导磁放大器的放大倍数随窄区宽度的变化规律。在此基础上，设计并制备了一种双窄区超导/TMR复合磁传感器，经测试结果表明：该复合磁传感器的最大磁场放大倍数达到97

且其双窄区比值与仿真结果相近，本文所提方法可行。

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