Application status and development prospect of ALD technology

LIAO Rong; KANG Tangfei; DENG Shijie; WU Haiyang; WANG Jingyun

doi:10.13873/J.1000-9787(2021)10-0005-05

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Application status and development prospect of ALD technology

更新时间：2025-09-11

- Application status and development prospect of ALD technology
- Issue 10, Pages: 5-9(2021)
- 作者机构：
  
  华南理工大学电子与信息学院
- 作者简介：
- 基金信息：
- DOI：10.13873/J.1000-9787(2021)10-0005-05
  CLC： TN305
- Published：2021
- 稿件说明：
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LIAO Rong, KANG Tangfei, DENG Shijie, et al. Application status and development prospect of ALD technology[J]. 2021, (10): 5-9.
DOI：

LIAO Rong, KANG Tangfei, DENG Shijie, et al. Application status and development prospect of ALD technology[J]. 2021, (10): 5-9. DOI： 10.13873/J.1000-9787(2021)10-0005-05.

摘要

介绍了原子层沉积(ALD)技术的应用现状及发展前景

包括ALD原理、ALD技术的主要优势、ALD在各方面的应用

如半导体及纳米电子学应用、光电材料及器件、微机电系统(MEMS)、纳米结构及其它应用。ALD工艺所需温度比其他化学气相沉积方法远远降低

温度约为300℃。ALD对薄膜的均匀性有更好的控制

由于原子层技术的独特性

使其在半导体等行业的发展前景十分可观。

Abstract

Application status and development prospect of atomic layer deposition（ALD） technology

including the ALD principle

the main advantages of ALD technology

the application of ALD in various fields

such as semiconductor and applications

optoelectronic materials and devices

micro-electro-mechanical system（MEMS）

nanostructures and other applications are introduced.The temperature required for ALD process is much lower than that of other chemical vapor deposition methods

about 300 ℃.ALD deposition has better control on thin-film uniformity

and the uniqueness of ALD technology determines its wide application in semiconductor and other industries.

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