A micro vapor cell manufacturing technology based on silicon through hole forming and low temperature anode bonding of silicon and glass is investigated. The effects of substrate surface state

temperature and voltage on anode bonding are analyzed and verified by experiments. The results of bubble observation on substrate surface

analysis of scanning electron microscope photos of vapor cell section

bonding strength test and cell hermeticity test show that micro vapor cells fabricated by this technology are with good comprehensive performance. In the temperature range of 180 ～ 300℃

the bonding strengths are from several MPa up to several decades MPa

and the gas leakage rates of the bonding cells are less than 1. 0 × 10-13 Pa·m3·s-1

which indicates that the technology can be used in the fabrication of micro alkali metal vapor cells.