Millimeter wave wideband LNA design based on 0. 13 μm CMOS process

TAO Lu; WANG Jun

doi:10.13873/J.1000-9787(2020)05-0110-03

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Millimeter wave wideband LNA design based on 0. 13 μm CMOS process

更新时间：2025-09-11

- Millimeter wave wideband LNA design based on 0. 13 μm CMOS process
- Issue 5, Pages: 110-112+121(2020)
- 作者机构：
  
  西南科技大学信息工程学院
- 作者简介：
- 基金信息：
- DOI：10.13873/J.1000-9787(2020)05-0110-03
  CLC： TN722.3
- Published：2020
- 稿件说明：
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TAO Lu, WANG Jun. Millimeter wave wideband LNA design based on 0. 13 μm CMOS process[J]. 2020, (5): 110-112+121.
DOI：

TAO Lu, WANG Jun. Millimeter wave wideband LNA design based on 0. 13 μm CMOS process[J]. 2020, (5): 110-112+121. DOI： 10.13873/J.1000-9787(2020)05-0110-03.

摘要

针对5G通信技术在毫米波频段的应用

设计了一种25～30 GHz的低噪声放大器（LNA）。为了在毫米波频段实现高增益

采用了三级电路级联结构

第一级采用共源结构

第二、三级采用共源共栅（cascode）结构

在共源管和共栅管之间加入级间电感

消除级间寄生电容和抑制共栅管的输出噪声。添加反馈网络来优化电路

利用E

-I

噪声模型对反馈网络进行噪声分析

优化LNA噪声性能。基于TSMC0. 13μm CMOS工艺

采用ADS软件平台对LNA进行仿真。实验结果表明:在25～30 GHz频段内性能良好

小于-12. 6 d B

S22小于-13. 4 d B

为（25. 6±0. 3） d B

NF为（2. 27～2. 77） d B。

Abstract

A 25 ～ 30 GHz low noise amplifier（ LNA） is designed for the application of 5 G communication technology in the millimeter wave band. In order to achieve high gain in the millimeter wave band

a three-stage circuit cascade structure is adopted

the first stage adopts a common source structure

the second and the third stages adopt a cascode structure

an interstage inductor is added between the common source tube and the common gate tube to eliminate the parasitic capacitance between the stages and suppress the output noise of the common gate. The circuit is optimized by adding a feedback network

and the E

-I

noise model is

used to perform noise analysis on the feedback network

so as to optimize LNA noise performance. Based on the TSMC 0. 13 μm CMOS process

the ADS software platform is used to simulate on LNA. The experimental results show that the performance is good in the 25～ 30 GHz band

2221=（ 25. 6 ± 0. 3） d B

NF =（ 2. 27～ 2. 77） d B.

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