Optimal design and fabrication of E-type structural MEMS SOI pressure sensor chip

LI Chuang; ZHAO Libo; ZHANG Lei; TU Xiaojun; ZHANG Jianwen

doi:10.13873/J.1000-9787(2020)04-0073-04

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Optimal design and fabrication of E-type structural MEMS SOI pressure sensor chip

更新时间：2025-09-11

- Optimal design and fabrication of E-type structural MEMS SOI pressure sensor chip
- Issue 4, Pages: 73-76(2020)
- 作者机构：
  
  1. 苏州长风航空电子有限公司传感器事业部
  2. 西安交通大学机械制造系统工程国家重点实验室
- 作者简介：
- 基金信息：
- DOI：10.13873/J.1000-9787(2020)04-0073-04
  CLC： V263;TP212
- Published：2020
- 稿件说明：
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LI Chuang, ZHAO Libo, ZHANG Lei, et al. Optimal design and fabrication of E-type structural MEMS SOI pressure sensor chip[J]. 2020, (4): 73-76.
DOI：

LI Chuang, ZHAO Libo, ZHANG Lei, et al. Optimal design and fabrication of E-type structural MEMS SOI pressure sensor chip[J]. 2020, (4): 73-76. DOI： 10.13873/J.1000-9787(2020)04-0073-04.

摘要

设计了一种基于绝缘体上硅(SOI)材料的E型结构可动膜片微机电系统(MEMS)压阻式压力芯片。E型膜结构与传统C型膜结构相比解决了灵敏度与线性度无法同时满足工程需求的难题。从可动膜片结构设计、关键尺寸计算以及有限元分析等方面考虑

对压力芯片可动膜片进行了结构优化。通过MEMS工艺和薄膜隔离充油工艺

完成了压力传感器的装配。设计的压力传感器量程为0～1 MPa

灵敏度为15. 1 m V/V

非线性误差为0. 2%FS。

Abstract

A MEMS piezoresistive pressure sensor chip with E-type structural membrane based on silicon on insulator（ SOI） substrate material is designed. Compared with traditional C-type

E-type structural membrane resolves the contradiction between the sensitivity and linearity that both of them are difficult to improve synchronously. Through the sensitive membrane structure design

the key dimensions calculation and the finite element analysis

the structure of the sensitive membrane is optimized. The sensor chip with the proposed structural membrane is fabricated by the MEMS technology and film-insulated-oil-filled process. The experiments show that the proposed sensor achieves sensitivity of 15. 1 m V/V and nonlinearity error of 0. 2 % FS in the range of 0～ 1 MPa.

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