A novel Si-Si wafer bonding method is presented to achieve micro-structured surface silicon wafer package. Ti/Au is chosen as metal transition layer to ensure the bonding force. Hydrophilic wet method is used for surface treatment and to reduce the surface impurity content

micro assembly platform and bonding machine are used to control the bonding environment and temperature to ensure both precision and strength of bonding. Silicon wafer is annealed by using constant temperature furnace. This method can achieve bonding with low level silicon wafer surface and the degree of cleanliness requirements

harsh environmental requirements. The results of high and low temperature cycle test and the established tensile failure test show that this method ensures the strength of the packaging module

and has the advantages of low process temperature

easy realization of graphics and high degree of stress matching.