Research development of thermal nanoimprint lithography technology

HAN Li-juan; SUN Hong-wen; YIN Min-qi; WANG Hai-bin

doi:10.13873/J.1000-9787(2019)04-0001-03

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Research development of thermal nanoimprint lithography technology

更新时间：2025-09-11

- Research development of thermal nanoimprint lithography technology
- Issue 4, Pages: 1-3+7(2019)
- 作者机构：
  
  河海大学物联网工程学院
- 作者简介：
- 基金信息：
- DOI：10.13873/J.1000-9787(2019)04-0001-03
  CLC： TN305.7
- Published：2019
- 稿件说明：
移动端阅览
HAN Li-juan, SUN Hong-wen, YIN Min-qi, et al. Research development of thermal nanoimprint lithography technology[J]. 2019, (4): 1-3+7.
DOI：

HAN Li-juan, SUN Hong-wen, YIN Min-qi, et al. Research development of thermal nanoimprint lithography technology[J]. 2019, (4): 1-3+7. DOI： 10.13873/J.1000-9787(2019)04-0001-03.

摘要

介绍了热纳米压印(T-NIL)的要素制备、工艺流程

分析了温度、压力、时间等因素对T-NIL技术的影响。针对这些因素

阐述了T-NIL技术的最新研究进展

包括抗粘连处理方法、加热加压方式、模具及光刻胶材料的选择、T-NIL设备等。介绍了T-NIL技术在不同领域的应用。

Abstract

The preparation of key elements and technological process of thermal nanoimprint lithography（ T-NIL）are introduced. The effects of temperature

pressure and time on thermal nanoimprint lithography technology are analyzed. The latest research progress of thermal nanoimprint lithography technology

including anti-adhesion treatment method

heating and pressurization method

the selection of mould and photoresist materials and T-NIL equipment are described. Applications of thermal nanoimprint lithography technology in different fields are introduced.

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