Measurement and analysis of residual stress in WLP with Al-Ge bonding

QIN Song; JIAO Ji-wei; WANG Min-chang; QIAN Qing

doi:10.13873/J.1000-9787(2016)10-0040-03

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Measurement and analysis of residual stress in WLP with Al-Ge bonding

更新时间：2025-09-11

- Measurement and analysis of residual stress in WLP with Al-Ge bonding
- Vol. 35, Issue 10, Pages: 40-42(2016)
- 作者机构：
  
  中国科学院上海微系统与信息技术研究所
- 作者简介：
- 基金信息：
- DOI：10.13873/J.1000-9787(2016)10-0040-03
  CLC： TN405
- Published：2016
- 稿件说明：
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[1]秦嵩,焦继伟,王敏昌,钱清.圆片级封装铝锗键合后残余应力的测量和分析[J].传感器与微系统,2016,35(10):40-42.

QIN Song, JIAO Ji-wei, WANG Min-chang, et al. Measurement and analysis of residual stress in WLP with Al-Ge bonding[J]. 2016, 35(10): 40-42.
[1]秦嵩,焦继伟,王敏昌,钱清.圆片级封装铝锗键合后残余应力的测量和分析[J].传感器与微系统,2016,35(10):40-42. DOI： 10.13873/J.1000-9787(2016)10-0040-03.

QIN Song, JIAO Ji-wei, WANG Min-chang, et al. Measurement and analysis of residual stress in WLP with Al-Ge bonding[J]. 2016, 35(10): 40-42. DOI： 10.13873/J.1000-9787(2016)10-0040-03.

摘要

以圆片级铝锗键合后的残余应力为研究对象

在键合环下方和周围制作了一系列形状相同的力敏电阻条

通过比较键合前后力敏电阻条的阻值变化

分析电阻条处残余应力的大小及与工艺相关性。结果表明:键合环内外的压阻变化约为键合环下方压阻变化的3倍。这种方法可以作为晶圆级键合质量的有效在线表征手段之一。

Abstract

Taking residual stress in wafer level packaging（ WLP） with Al-Ge bonding as research object

a series of resistor stripe with the same shape are fabricated beneath or adjacent to the bond pad. Analyze magnitude of residual stresses on resistors strip and its correlation with the process by comparing resistance variation of resistor stripe before and after bonding. Results show that the resistance variation of piezoresistors inside and outside the bond pad is three times larger than that beneath the bond pad. This method can be one of the effective means for online characterization of wafer level bonding quality.

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references

硅玻璃阳极键合绝压压阻式压力传感器中的残余应力 [J]. 许东华,张兆华,林惠旺,刘理天,任天令. 功能材料与器件学报 . 2008(02)

MEMS封装中的残余应力演化及其相关可靠性研究 [D]. 孙志国. 中国科学院研究生院（上海微系统与信息技术研究所） 2002

Residual stresses at cavity corners in silicon-on-insulator bonded wafers [J] . T-W Lin,O Elkhatib,J Makinen,M Palokangas,H T Johnson,G P Horn. Journal of Micromechanics and Microengineering . 2013 (9)

On the Al-Si, Al-Ge, and Al-Ge-Si systems and their application to brazing in high power semiconductor devices [J] . F. H. Hayes,R. D. Longbottom,E. Ahmad,G. Chen. Journal of Phase Equilibria . 1993 (4)

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