Research on influence of doping on gas sensitive properties of ZnO

HUANG Bin-bin; ZHANG Qin-yi; LIU Lei; LONG Hai-xian; ZHANG Shun-ping

doi:10.13873/J.1000-9787(2016)05-0036-03

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Research on influence of doping on gas sensitive properties of ZnO

更新时间：2025-09-11

- Research on influence of doping on gas sensitive properties of ZnO
- Vol. 35, Issue 5, Pages: 36-38+42(2016)
- 作者机构：
  
  1. 武汉理工大学材料科学与工程学院
  2. 华中科技大学材料科学与工程学院
- 作者简介：
- 基金信息：
- DOI：10.13873/J.1000-9787(2016)05-0036-03
  CLC： TQ132.41;TP212
- Published：2016
- 稿件说明：
移动端阅览
[1]黄彬彬,张覃轶,刘磊,龙海仙,张顺平.掺杂对ZnO气敏性能的影响研究[J].传感器与微系统,2016,35(05):36-38+42.

HUANG Bin-bin, ZHANG Qin-yi, LIU Lei, et al. Research on influence of doping on gas sensitive properties of ZnO[J]. 2016, 35(5): 36-38+42.
[1]黄彬彬,张覃轶,刘磊,龙海仙,张顺平.掺杂对ZnO气敏性能的影响研究[J].传感器与微系统,2016,35(05):36-38+42. DOI： 10.13873/J.1000-9787(2016)05-0036-03.

HUANG Bin-bin, ZHANG Qin-yi, LIU Lei, et al. Research on influence of doping on gas sensitive properties of ZnO[J]. 2016, 35(5): 36-38+42. DOI： 10.13873/J.1000-9787(2016)05-0036-03.

摘要

ZnO是最早发现的金属氧化物气敏材料

对其掺杂一直是研究的一个热点。采用机械球磨法制备了22种不同掺杂的纳米Zn O气敏材料

通过乙醇、丙酮、苯的测试

系统对比了掺杂元素的化学性质

如离子半径、化合价、元素周期等对Zn O气敏性能的影响。掺杂元素的离子半径为0.072

.088 nm时

传感器对被测气体的响应比掺杂其他离子半径的高。不同周期掺杂元素对Zn O纳米气体传感器的选择性有一定的影响。

Abstract

Zn O is the first discovered metal oxide semiconductor（ MOS） gas sensing material

doping in Zn O is a hotspot of research

22 kinds of doped Zn O gas sensing materials are prepared by mechanical ball milling method.Ethanol

acetone and benzene are used to test their gas sensing properties. The effects of chemical properties such as ionic radius

valence and periods of dopants on their gas sensing properties are compared. The sensors responses to the measured gases are higher than the others when their ionic radius are in the range of 0. 072

. 088 nm. Different periods of dopants have a certain influence on selectivity of Zn O nano gas sensors.

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references

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