Research on mask of ICP deep silicon etching process

LI Dan-dan; LIANG Ting; LI Sai-nan; YAO Zong; XIONG Ji-jun

doi:10.13873/J.1000-9787(2015)08-0029-03

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Research on mask of ICP deep silicon etching process

更新时间：2025-09-11

- Research on mask of ICP deep silicon etching process
- Vol. 34, Issue 8, Pages: 29-31(2015)
- 作者机构：
  
  1. 中北大学电子测试技术重点实验室
  2. 中北大学仪器科学与动态测试教育部重点实验室
- 作者简介：
- 基金信息：
- DOI：10.13873/J.1000-9787(2015)08-0029-03
  CLC： TN305.7
- Published：2015
- 稿件说明：
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[1]李丹丹,梁庭,李赛男,姚宗,熊继军.ICP深硅刻蚀工艺掩模的研究[J].传感器与微系统,2015,34(08):29-31.

LI Dan-dan, LIANG Ting, LI Sai-nan, et al. Research on mask of ICP deep silicon etching process[J]. 2015, 34(8): 29-31.
[1]李丹丹,梁庭,李赛男,姚宗,熊继军.ICP深硅刻蚀工艺掩模的研究[J].传感器与微系统,2015,34(08):29-31. DOI： 10.13873/J.1000-9787(2015)08-0029-03.

LI Dan-dan, LIANG Ting, LI Sai-nan, et al. Research on mask of ICP deep silicon etching process[J]. 2015, 34(8): 29-31. DOI： 10.13873/J.1000-9787(2015)08-0029-03.

摘要

通过使用深硅等离子刻蚀机

以C4F8和SF6为刻蚀气体

对以光刻胶与金属铝两种材料作为掩模的深硅刻蚀结果进行对比

研究了深硅刻蚀过程中掩模材料对刻蚀结果的影响。实验结果表明:以光刻胶做掩模

深硅刻蚀后硅侧壁和硅底部表面形貌平整

垂直度较之铝掩模相当;以金属铝做掩模

深硅刻蚀后深槽底部表面不平整

出现长草现象

但是刻蚀选择比大于光刻胶

两种掩模的硅刻蚀速率相当。

Abstract

By using deep silicon plasma etching machine with C4F8 and SF6as etching gas

deep silicon etching results are compared between the photoresist mask and the metal aluminum mask

the influence of mask material on results in process of deep silicon etching is studied. Experimental results show that

with photoresist mask

the surface morphology of silicon side wall and silicon bottom are smooth after deep silicon etching

verticality is almost the same compared with aluminum mask; while with metal aluminum mask

the silicon bottom surface is uneven with rough phenomenon

but etching selection ratio is larger than the photoresist

silicon etching rate of the two masks is similar to each other.

关键词

Keywords

references

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