Research on electrical properties of NiCr thin film micro-heater in cryogenic environment

WU Ting-ting; LIU Jing-quan; JIANG Shui-dong; XU Bin; GUO Jie; YANG Bin

doi:10.13873/J.1000-9787(2014)09-0038-04

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Research on electrical properties of NiCr thin film micro-heater in cryogenic environment

更新时间：2025-09-11

- Research on electrical properties of NiCr thin film micro-heater in cryogenic environment
- Vol. 33, Issue 9, Pages: 38-41(2014)
- 作者机构：
  
  上海交通大学微纳科学技术研究院微米/纳米加工技术国家重点实验室薄膜与微细技术教育部重点实验室
- 作者简介：
- 基金信息：
- DOI：10.13873/J.1000-9787(2014)09-0038-04
  CLC： TM924.01
- Published：2014
- 稿件说明：
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[1]吴婷婷,刘景全,江水东,徐斌,郭杰,杨斌.NiCr薄膜微加热器在低温环境下的电学特性研究[J].传感器与微系统,2014,33(09):38-41.

WU Ting-ting, LIU Jing-quan, JIANG Shui-dong, et al. Research on electrical properties of NiCr thin film micro-heater in cryogenic environment[J]. 2014, 33(9): 38-41.
[1]吴婷婷,刘景全,江水东,徐斌,郭杰,杨斌.NiCr薄膜微加热器在低温环境下的电学特性研究[J].传感器与微系统,2014,33(09):38-41. DOI： 10.13873/J.1000-9787(2014)09-0038-04.

WU Ting-ting, LIU Jing-quan, JIANG Shui-dong, et al. Research on electrical properties of NiCr thin film micro-heater in cryogenic environment[J]. 2014, 33(9): 38-41. DOI： 10.13873/J.1000-9787(2014)09-0038-04.

摘要

设计了一种适用于深低温环境的微型加热器。使用AC磁控溅射技术将NiCr（80/20 at.%）合金沉积到SiO2/Si基底上

并采用微加工工艺实现薄膜图形化

作为加热器的加热元件。研究了NiCr薄膜的电学性能和晶体结构与退火条件之间的关系。实验表明:在450℃氮气环境下退火30min

可以获得深低温性能优良的NiCr加热器。该加热器在20K时的电阻温度系数（TCR）为80.80×10-6/K。X射线衍射（XRD）分析显示NiCr薄膜在450℃氮气环境下退火后

薄膜的结晶度增大

因此

退火条件对薄膜的电阻率和电阻温度系数有较大的影响。

Abstract

A micro-heater used in cryogenic environment is designed. NiCr（ 80 /20 at. %） thin film is deposited on SiO2/Si substrates by AC magnetron sputtering technique and patterned by micro processing technology as heating component. The electrical properties and crystalstructure of NiCr film is researched. Experiment shows that good performance NiCr heater can be obtained after annealed at 450 ℃ for 30 min in N2. The temperature coefficient of resistance（ TCR） of heater is 80. 80 × 10- 6/K at 20 K. X-ray diffraction（ XRD） analysis show crystallinity of the thin film becomes stronger after annealed at 450 ℃ in N2ambient

so annealing conditions have a significant effect on resistivity and TCR of thin film.

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references

Annealing effect on the electrical properties and microstructure of embedded Ni–Cr thin film resistor [J] . Lifei Lai,Wenjin Zeng,Xianzhu Fu,Rong Sun,Ruxu Du. Journal of Alloys and Compounds . 2012

Optimization of sputtering parameters for Ni-Cr alloy deposition on copper foil as embedded thin film resistor [J] . Lifei Lai,Wenjin Zeng,Xianzhu Fu,Rong Sun,Ruxu Du. Surface & Coatings Technology . 2012

Structural and surface properties of NiCr thin films prepared by DC magnetron sputtering under variation of annealing conditions [J] . Yong Kwon,Nam-Hoon Kim,Gwang-Pyo Choi,Woo-Sun Lee,Yong-Jin Seo,Jinseong Park. Microelectronic Engineering . 2005 (3)

AES, AFM and TEM studies of NiCr thin films for capacitive humidity sensors [J] . Thin Solid Films . 1998 (1)

Structural and electrical properties of stable ni/cr thin films [J] . C. L. Au,M. A. Jackson,W. A. Anderson. Journal of Electronic Materials . 1987 (4)

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