Design of high-efficiency dual-band broadband GaN power amplifier

WANG Shuai; LIU Renchuang; LI Xin

Chinese

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Design of high-efficiency dual-band broadband GaN power amplifier

Design & Manufacture | 更新时间：2026-05-18

- Design of high-efficiency dual-band broadband GaN power amplifier
- Vol. 45, Issue 5, Pages: 137-141(2026)
- 作者机构：
  
  河南理工大学电气工程与自动化学院,河南,焦作,454000
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN722;TP211
- Published：2026
- 稿件说明：
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WANG Shuai, LIU Renchuang, LI Xin. Design of high-efficiency dual-band broadband GaN power amplifier[J]. 2026, 45(5): 137-141.
DOI：

WANG Shuai, LIU Renchuang, LI Xin. Design of high-efficiency dual-band broadband GaN power amplifier[J]. 2026, 45(5): 137-141. DOI：

摘要

为了满足5G通信系统对更宽频带和更高效率的需求，首先基于连续F类功率放大器的工作模式设计了一种双频带谐波控制网络，将双频带内的谐波阻抗控制在最佳功率效率区间，使其满足连续F类工作模式

从而提高双频段效率。随后

设计了一种双频宽带输出匹配的方法，该方法可以实现任意双频带的阻抗输出匹配，拓宽双频功率放大器的带宽。最后，选用氮化镓高电子迁移率晶体管(GaN HEMT)CGH40010F设计了一种双频宽带高效率功率放大器。测试结果显示，该双频功率放大器在2.2~2.6GHz和3.35~3.65GHz频段内可提供65%功率附加效率，且输出功率和增益均在40dBm和9dB以上，验证了设计理论的正确性与可行性。

Abstract

In order to meet the demands for wider bandwidth and higher efficiency in 5G communication systems

a dual-band harmonic control network is first designed based on the operation mode of continuous class-F power amplifiers.The harmonic impedance in the dual-band is controlled within the optimal power efficiency range to satisfy the operation mode in continuous class-F to improve the dual-band efficiency.Then

a dual-band broadband output matching method is designed

which can realize impedance matching for arbitrary dual-band and broaden the bandwidth of dual-band power amplifier.Finally

a dual-band broadband high-efficiency power amplifier is designed using the gallium nitride high-electron-mobility transistor(GaN HEMT) CGH40010F.The test results show that the dual-band power amplifier can provide 65% power-added efficiency in the frequency bands of 2.2~2.6GHz and 3.35~3.65GHz

with the output power and gain above 40dBm and 9dB

which verifies the correctness and feasibility of the design theory.

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