Research on gas sensor based on photochemically deposited porous WO<sub>3</sub> films

CHEN Jingyi; CHANG Xueting; ZHU Xiaojie; SUN Shibin

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Research on gas sensor based on photochemically deposited porous WO₃ films

Research & Approach | 更新时间：2025-12-30

- Research on gas sensor based on photochemically deposited porous WO₃ films
- Vol. 44, Issue 12, Pages: 23-27(2025)
- 作者机构：
  
  1. 上海海事大学海洋科学与工程学院,上海,201306
  2. 上海海事大学物流工程学院,上海,201306
  3. 上海海事大学物流科学与工程研究院,上海,201306
- 作者简介：
- 基金信息：
- DOI：
  CLC： TP212;O484
- Published：2025
- 稿件说明：
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CHEN Jingyi, CHANG Xueting, ZHU Xiaojie, et al. Research on gas sensor based on photochemically deposited porous WO₃ films[J]. 2025, 44(12): 23-27.
DOI：

CHEN Jingyi, CHANG Xueting, ZHU Xiaojie, et al. Research on gas sensor based on photochemically deposited porous WO₃ films[J]. 2025, 44(12): 23-27. DOI：

摘要

金属氧化物半导体（MOS）气体传感器因具有成本低、灵敏度高、稳定性好等优点一直都得到广泛应用，但制备高质量的MOS气敏薄膜目前仍然面临着挑战。通过光化学沉积(PCD)法结合退火工艺成功制备了高纯度、高结晶度和优异均一性的WO

多孔薄膜，通过扫描电子显微镜(SEM)和X射线衍射(XRD)对WO

薄膜的形貌和晶体结构进行了表征。同时，基于WO

薄膜构筑了气体传感器，研究了沉积层数和退火温度对WO

薄膜气敏性能的影响。研究表明:基于WO

薄膜的气体传感器对丙酮均具有较好的选择性，沉积层数为8层、退火温度为300℃获得的WO

薄膜具有最佳的气敏性能，在280℃最佳工作温度下

对丙酮具有高的灵敏度、快速的响应-恢复速度和较宽的工作范围。

Abstract

Metal oxide semiconductor(MOS)gas sensors are widely used in virtue of their advantages of low cost

high sensitivity

and good stability

but the preparation of high-quality MOS gas-sensitive films is still a challenge at present.Porous WO

films with high purity

high crystallinity and excellent homogeneity are successfully prepared by using a photochemical deposition(PCD)method and combining annealing process.The morphology and crystal structures of WO

films are characterized by scanning electron microscopy(SEM)and X-ray diffract

ion(XRD).Meanwhile

the gas sensors based on the WO

film are constructed

and the effects of deposition layer numbers and annealing temperature on the gas-sensitive performance of the WO

films are researched.Results show that all the WO

films-based gas sensors have outstanding selectivity to acetone.The 8 deposition layers and 300℃ annealing temperature

film obtained at which exhibits the optimal gas-sensing performance

with high sensitivity

fast response-recovery rate

and wide working range for acetone at the optimal working temperature of 280℃.

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Research on gas sensor based on photochemically deposited porous WO3 films

DOI：

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Abstract

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Research on gas sensor based on photochemically deposited porous WO₃ films