A new type integrated fluorescence sensor is designed based on standard CMOS process

the sensor consists of P+/ Nwell / Psub double-junction photodiode structure and high sensitivity CTIA active pixel circuit structure. Realization of sensor is used 0. 5 μm CMOS technology

and test results show that peak value sensitivity of double-junction photodiode is 2 × 10- 8A·m2/ W at the wavelength of 532 nm

the sensitivity of CTIA active pixel structure can reach to 2 243 V / lx·s when the light intensity is 6lx and the integration time is 310 μs. This design indicates that the CTIA active pixel circuit using double-junction PN photodiode has higher sensitivity of photoelectric transfer to weak light.