交流电沉积实现微纳器件定向连接研究

冀健龙; 桑胜波; 李朋伟; 张文栋; 周兆英; 杨兴

doi:10.13873/j.1000-97872014.03.004

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交流电沉积实现微纳器件定向连接研究

研究与探讨 | 更新时间：2025-09-11

- 交流电沉积实现微纳器件定向连接研究
- Research on oriented connection MEMS/NEMS device implemented by AC electrodeposition
- 传感器与微系统 2014年33卷第3期页码：5-7+11
- 作者机构：
  
  1. 太原理工大学信息学院微纳系统研究中心
  2. 清华大学精密仪器系微机电系统实验室
- 作者简介：
- 基金信息：
  
  国家自然科学基金资助项目（513752,51205276,51105267,51375263）;博士后科学基金资助项目（20110491629,2013T60268）
- DOI：10.13873/j.1000-97872014.03.004
  中图分类号： TB383.1
- 纸质出版：2014
- 稿件说明：
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[1]冀健龙,桑胜波,李朋伟,张文栋,周兆英,杨兴.交流电沉积实现微纳器件定向连接研究[J].传感器与微系统,2014,33(03):5-7+11.

JI Jian-long, SANG Sheng-bo, LI Peng-wei, et al. Research on oriented connection MEMS/NEMS device implemented by AC electrodeposition[J]. 2014, 33(3): 5-7+11.
[1]冀健龙,桑胜波,李朋伟,张文栋,周兆英,杨兴.交流电沉积实现微纳器件定向连接研究[J].传感器与微系统,2014,33(03):5-7+11. DOI： 10.13873/j.1000-97872014.03.004.

JI Jian-long, SANG Sheng-bo, LI Peng-wei, et al. Research on oriented connection MEMS/NEMS device implemented by AC electrodeposition[J]. 2014, 33(3): 5-7+11. DOI： 10.13873/j.1000-97872014.03.004.

摘要

使用交流电化学方法定向制备了预制微电极之间的电连接。通过调节交流电压与偏置直流电压幅值可以控制电连接的生长方向。如果施加的交流电压幅值高于生成电连接的电压阈值

并且该值恒定时

频率越小

浓度越大

电连接晶体越粗壮;而当电解液浓度与频率恒定时

电压幅值变化对形貌影响较小。有限元仿真模拟进一步说明:当施加的交流电压高于阈值时

电极处于交流电渗流上游。电极扩散层厚度增加将诱导电极之间电连接晶体的生长。在交流电压上叠加直流偏置电压时

电连接晶体从偏置电压相对较负的一端向另一端生长。伏安特性测试结果表明:该连接具有优异的接触特性。

Abstract

Electric connections between prepared microelectrodes are fabricated directionally utilizing the AC electrochemical method.Growth directions of electric connection can be controlled through tuning amplitude of AC and biased DC voltage.The observations illustrated that if amplitude of AC frequency and higher electrolyte concentration gave rise to thicker and denser dendrite crystals when the applied AC voltage magnitude is higher than the threshold for interconnect formation.It is also demonstrated that the amplitude variation of AC signal exerts smaller effect on interconnect morphologies when electrolyte concentrations and AC frequencies are kept constant.Finite element simulation further illustrates that the electrodes locate at the upper flow of AC electroosmosis when the AC voltage is higher than the threshold

and increases of thickness of diffusion layer near the electrode induces the growth of electric connection crystals between the electrodes.When the AC voltage is DC biased

the interconnect crystals are lean to grow from the relative negative electrode to the other.Results of volt- ampere characteristics test shows that this connection has excellent contact performance.

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references

One‐Dimensional Nano‐Interconnection Formation [J] . Jianlong Ji,Zhaoying Zhou,Xing Yang,Wendong Zhang,Shengbo Sang,Pengwei Li. Small . 2013 (18)

Bottom-up synthesis of ultrathin straight platinum nanowires: Electric field impact [J] . Alexander Nerowski,Joerg Opitz,Larysa Baraban,Gianaurelio Cuniberti. Nano Research . 2013 (5)

The electrochemical growth of conducting polymer “nanowires” [J] . Bhuvaneswari Kannan,David E. Williams,Khashayar Khoshmanesh,Graham A. Bowmaker,Jadranka Travas-Sejdic. Journal of Electroanalytical Chemistry . 2012

Gold–platinum alloy nanowires as highly sensitive materials for electrochemical detection of hydrogen peroxide [J] . Yibo Zhou,Gang Yu,Fangfang Chang,Bonian Hu,Chuan-Jian Zhong. Analytica Chimica Acta . 2012

Morphology and stoichiometry control of hierarchical CuInSe 2 /SnO 2 nanostructures by directed electrochemical assembly for solar energy harvesting [J] . Juan Sun,Cheng Sun,Sudip K. Batabyal,Phong D. Tran,Stevin S. Pramana,Lydia H. Wong,Subodh G. Mhaisalkar. Electrochemistry Communications . 2011 (1)

Self-assembled dendritic nanowires of Au–Pt alloy through electrodeposition from solution under AC fields [J] . Yan Cheng,Gang Yu,Lili Tang,Yibo Zhou,Gaixiu Zhang. Journal of Crystal Growth . 2011 (1)

Growing One‐Dimensional Metallic Nanowires by Dielectrophoresis [J] . NiteshRanjan,HartmutVinzelberg,MichaelMertig. Small . 2006 (12)

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