1. 太原理工大学微纳系统研究中心
2. 太原理工大学新型传感器与智能控制教育部重点实验室
纸质出版:2014
移动端阅览
[1]孙永娇,高翻琴,赵振廷,张文栋,胡杰.基于微接触印刷的ZnO紫外传感器特性研究[J].传感器与微系统,2014,33(02):50-53.
SUN Yong-jiao, GAO Fan-qin, ZHAO Zhen-ting, et al. Characteristics study of ZnO ultraviolet sensor based on microcontact printing[J]. 2014, 33(2): 50-53.
[1]孙永娇,高翻琴,赵振廷,张文栋,胡杰.基于微接触印刷的ZnO紫外传感器特性研究[J].传感器与微系统,2014,33(02):50-53. DOI: 10.13873/j.1000-97872014.02.035.
SUN Yong-jiao, GAO Fan-qin, ZHAO Zhen-ting, et al. Characteristics study of ZnO ultraviolet sensor based on microcontact printing[J]. 2014, 33(2): 50-53. DOI: 10.13873/j.1000-97872014.02.035.
采用微接触印刷技术和水热生长方法在硅基底上实现了ZnO种子层的图案化转移与纳米线阵列的可控制备。利用X射线衍射(XRD)、能量色散谱(EDS)和扫描电子显微镜(SEM)等测试手段对制备的ZnO纳米线晶体结构、化学组分以及表面形貌进行了表征
并对制备的ZnO纳米线传感器进行了紫外特性测试。测试结果表明:随着紫外光强度的增加
传感器的光暗电流比和光响应度也随之增加。当紫外传感器偏压在4.5 V时
其光暗电流比为80.8
响应度可达4.05 A/W。
Microcontact printing technology is used to realize pattern transfer of ZnO seed layer and nanowire arrays are synthesized controllably by hydrothermal method on Si substrate.The crystal structure
chemical composition and morphology of ZnO nanowires are characterized with X-ray diffraction(XRD)
energy dispersive spectrometer(EDS) and scanning electron microscopy(SEM)
and properties of ultraviolet(UV) are also tested on the fabricated ZnO nanowire sensor.The measured results show that photocurrent / darkcurrent ratio and optical responsivity are enhanced with the increasing of UV intensity.When the sensor is at a bias of 4.5 V
its photocurrent / darkcurrent ratio and optical responsivity can reach 80.8 and 4.05 A / W.
Facile synthesis of ZnO nanowires on FTO glass for dye-sensitized solar cells [J]. 韩志涛,李思思,李俊君,褚金奎,陈勇. Journal of Semiconductors . 2013(07)
基于四针状ZnO纳米结构的高灵敏紫外探测器件 [J]. 郝永皓,赵建伟,秦丽溶,郭庆,木繁,闫种可. 西南大学学报(自然科学版) . 2012(05)
ZnO纳米线紫外探测器的制备和快速响应性能的研究 [J]. 宋志明,赵东旭,郭振,李炳辉,张振中,申德振. 物理学报 . 2012(05)
La掺杂ZnO和SnO 2 薄膜的气敏特性 [J]. 董斌华,李健,杨晶. 传感器与微系统 . 2011(07)
背入射Au/ZnO/Al结构肖特基紫外探测器 [J]. 赵延民,张吉英,张希艳,单崇新,姚斌,赵东旭,张振中,李炳辉,申德振,范希武. 发光学报 . 2010(04)
Fabrication of 3 D ‐silicon micro‐pillars/walls decorated with aluminum‐ Z n O / Z n O nanowires for optoelectric devices [J] . Hakan Karaagac,V. J. Logeeswaran,M. Saif Islam. Phys. Status Solidi A . 2013 (7)
High responsivity ZnO nanowires based UV detector fabricated by the dielectrophoresis method [J] . Liang Guo,Hong Zhang,Dongxu Zhao,Binghui Li,Zhenzhong Zhang,Mingming Jiang,Dezhen Shen. Sensors & Actuators: B. Chemical . 2011
Hierarchical weeping willow nano-tree growth and effect of branching on dye-sensitized solar cell efficiency [J] . Indria Herman,Junyeob Yeo,Sukjoon Hong,Daeho Lee,Koo Hyun Nam,Jun-ho Choi,Won-hwa Hong,Dongjin Lee,Costas P Grigoropoulos,Seung Hwan Ko. Nanotechnology . 2012 (19)
Photoresponse and decay mechanism of an individual ZnO nanowire UV sensor [J] . Ying Lang,Hong Gao,Wei Jiang,Lingling Xu,Hongtao Hou. Sensors & Actuators: A. Physical . 2011
Novel growth of ZnO micro-rod arrays using hydrophobically micropatterned surfaces [J] . Huafeng Shao,Xuefeng Qian,Baochen Huang. Materials Science in Semiconductor Processing . 2007 (2)
Ultraviolet photoconductive detector with high visible rejection and fast photoresponse based on ZnO thin film [J] . K.W. Liu,J.G. Ma,J.Y. Zhang,Y.M. Lu,D.Y. Jiang,B.H. Li,D.X. Zhao,Z.Z. Zhang,B. Yao,D.Z. Shen. Solid State Electronics . 2007 (5)
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