Based on traditional"sandwich"structure

heater-strip is embedded in the substrate insulting layer in MHP and due to constraint function of peripheric insulating layer

the effect of thermal stress caused by Pt heaterstrip and substrate and thermal expansion coefficient mismatch of baring layer on the device is reduced

thus improving the stability of the device.The MHP is fabricated by traditional MEMS processes

which began with preparing the 4-inch silicon wafer with SiO2/ Si3N4 insulting layers on both sides

through the method of thermal oxidation and LPCVD.The groove for micro heater is formed via RIE

and a layer of meander-shaped Pt micro heater is placed right in the groove by lift-off.An insulation pit is etched on the backside of the wafer through RIE and wet etching.After an insulting layer of SiO2 is sputtered onto the heater-strip

open window in position of lead disc.Experiment verifies that the MHP can work properly and steadily at 350 ℃ with good temperature uniformity within heating area（5 mm×5 mm）

and the power is about 130 mW at 350 ℃.