A novel wafer level package structure for high gn piezoresistive micro-accelerometer application is presented.Some breakthroughs of a lot of key techniques such as electrons path building

protection of the pad

precise scribing is achieved in chip micro-fabrication process.The glass-Si-glass（GSG） triple stacks anodic bonding technology for the wafer level packaging is an effective way to solve some fabrication problems such as chip sealing performance

miniaturization and mass production.The high gn piezoresistive micro accelerometer prototype is fabricated in the 4 in MEMS production line

which has a very small dimension of 1mm ×1 mm×0.8 mm.The back to back impact test using the standard sensor shows that the piezoresistive micro-accelerometer prototype has anti-impact capability of 105 gn

the sensitivity is 0.151 2 μV/gn/V and the resonance frequency is 200 kHz.