In order to study the piezoresistive characteristics of silicon nanocantilever sensing structure under the coexistence state of stretching and deformation bending

CMOS process is used to manufacture silicon nanocantilever sensing structure

and atomic force microscope and semiconductor parameter tester are used to measure the electrical parameters of silicon nanocantilever

and the measured displacement sensitivity is 1.582 16×10-4/nm.On the basis of experimental measurements of the relative change rate of resistance and the ANSYS finite element simulation of average stress

a nonlinear piezoresistive model is proposed to extract the first-order and second-order piezoresistive coefficients of the bent silicon nanocantilever.Research results show that the first-order piezoresistive coefficient is approximately 5 times that of the bulk silicon

and the significantly enhanced piezoresistive effect provides possible ways for the use of the silicon nano piezoresistive sensing structure to achieve ultra-high sensitivity design of the pressure nanosensor.Furthermore

the results also reveal that the length design of the silicon nano-cantilever needs trade-offs in order to obtain high sensitivity and good reliability.