In order to solve the problem that the existing accelerometer is easily damaged due to the lack of antioverload protection

a triaxial piezoresistive integrated accelerometer based on SoI with three-mass-block is introduced.The lateral anti-overload protection is designed by the interval gap released from the DRIE etching on the silicon film

and the vertical anti-overload protection is developed due to the convex corner that is made from the 〈110 〉 silicon compensative strips on the〈100 〉silicon film by KOH anisotropic etching.The packaged accelerometer is tested by a vibration exciter and a dropping-bar system.The test results show that the sensitivities in the x

y

and z axis are measured to be 2.56

2.54

2.05 mV / gn/3.3 V

respectively

the resolutions measured to be 0.53

0.87

0.77 mgn

and also the three axis direction has anti-overload capability over 3000 gn.