1. 中国科学院上海微系统与信息技术研究所传感国家重点实验室
2. 中国科学院研究生院
纸质出版:2012
移动端阅览
[1]霍建琴,冯飞,王文荣,戈肖鸿,李铁,王跃林.微米尺度温差测试结构的研究[J].传感器与微系统,2012,31(11):47-50.
HUO Jian-qin1, FENG Fei1, WANG Wen-rong1, et al. Research on measurement device for temperature difference in micro-meter scale[J]. 2012, 31(11): 47-50.
[1]霍建琴,冯飞,王文荣,戈肖鸿,李铁,王跃林.微米尺度温差测试结构的研究[J].传感器与微系统,2012,31(11):47-50. DOI: 10.13873/j.1000-97872012.11.013.
HUO Jian-qin1, FENG Fei1, WANG Wen-rong1, et al. Research on measurement device for temperature difference in micro-meter scale[J]. 2012, 31(11): 47-50. DOI: 10.13873/j.1000-97872012.11.013.
微米尺度热学性能测试需要在微米尺度内产生稳定的温度场并准确测量温差
对此设计并制作了一种微米尺度温差测试结构。当在测试结构的加热电极施加0.1
0.2
0.3
0.4
0.5V的电压时
测得实验室制作的硅纳米线两端温差分别为7
23
47
78
109 K
与ANSYS仿真结果大致吻合;此外
利用该测试结构测得硅纳米线塞贝克系数为4.24×10-4V/K
与文献中硅材料一致。测试结果表明:该结构能够提供稳定的温度场并精确测量温差
满足微米尺度温差测试的基本要求。
It’s essential for measuring thermal property parameters in the micro-meter scale to solve the problem that the thermal gradient is established and the temperature difference is measured accurately.A new device for temperature difference measurement in the micro-meter scale is presented.The temperature difference of severalmicrometer-long silicon nanowires fabricated in the laboratory is measured precisely.when the voltage of heater is 0.1
0.2
0.3
0.4
0.5 V
the temperature difference is 7
23
47
78
109 K
which is able to correlate the simulation results with ANSYS.The Seebeck coefficient of silicon nanowires measured by the device is 4.24 × 10-4 V / K
which is coincident with Seebeck coefficient of silicon.The experimental results show that this structure can provide stable temperature field and precisely measurement temperature difference
and it can meet the basic requirement for temperature difference measurement in micro-meter scale.
热电偶测温及其冷端温度补偿 [J]. 马天艳,马天虹. 工业计量 . 2005(06)
纳米线阵列结构温差电材料热电性能测试技术 [J]. 王为,司丽萍,陈岩,张建中. 电源技术 . 2003(S1)
传热学[M]. 高等教育出版社 , 杨世铭,陶文铨编著, 2006
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