1. 内蒙古大学物理科学与技术学院
2. 内蒙古自治区高等学校半导体光伏技术重点实验室
纸质出版:2011
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[1]董斌华,李健,杨晶.La掺杂ZnO和SnO_2薄膜的气敏特性[J].传感器与微系统,2011,30(07):75-78+81.
DONG Bin-hua1, LI Jian1, YANG Jing1. Gas sensing properties of ZnO and SnO2 films by La-doped[J]. 2011, 30(7): 75-78+81.
[1]董斌华,李健,杨晶.La掺杂ZnO和SnO_2薄膜的气敏特性[J].传感器与微系统,2011,30(07):75-78+81. DOI: 10.13873/j.1000-97872011.07.007.
DONG Bin-hua1, LI Jian1, YANG Jing1. Gas sensing properties of ZnO and SnO2 films by La-doped[J]. 2011, 30(7): 75-78+81. DOI: 10.13873/j.1000-97872011.07.007.
真空蒸发沉积薄膜再经热氧化获得n型掺La的ZnO和SnO2薄膜(玻璃衬底).研究掺La含量与热氧化工艺对薄膜的物相结构、表面形貌和气敏特性的影响.实验给出:掺La使薄膜表面颗粒细化
随La含量增加
ZnO
SnO2薄膜平均晶粒尺寸均增大.掺La可明显降低2种薄膜的气敏工作温度.相比之下
掺La对ZnO薄膜的灵敏度改善明显优于SnO2。在体积分数为6×10-3的还原性气体丙酮、乙醇中
ZnO∶La(3%)薄膜对二者的灵敏度分别达36
23;SnO2∶La(3%)对丙酮灵敏度可达15
掺La(5%)SnO2薄膜对乙醇的灵敏度也有一定的改善。
La-doped n-type ZnO and SnO2 thin films are prepared by method of vacuum evaporation on glass substrates.The effects of doping content and heat-oxidation on the structure
surface topography and sensitive characteristics are investigated.The results show that surface is refined after La-doping.With the increasing doping amount
the average grain size of ZnO and SnO2 thin films increased as well.In addition
the operating temperature for gas sensing is reduced significantly by the way of La-doping.In contrast with SnO2 doping
the La-doped ZnO films show better gas sensing property.When environed in reducing gas environment(acetone
ethanol)with volume fraction of 6×10-3
the sensitivities to acetone and ethanol of 3% La-doped ZnO thin films are 36 and 23;the sensitivity to acetone of 3% La-doped SnO2 thin films is 15.The 5% La-doped SnO2 films show the improvement of the sensing property to ethanol.
稀土La掺杂SnO 2 薄膜气敏特性 [J]. 谢俊叶,李健,汪良. 传感器与微系统 . 2010(01)
ZnO纳米薄膜的制备及其气敏性质研究 [J]. 程晓丽,徐英明,蔡庄,霍丽华,高山,赵辉. 无机化学学报 . 2008(01)
Pd掺杂对SnO 2 气敏性能的影响 [J]. 高兆芬,曾宇平. 传感器与微系统 . 2007(10)
采用粉末溅射的SnO 2 /CeO 2 薄膜气敏材料及元件 [J]. 邢建平,蔡成森,李娟,孟令国,李秀宇,高红. 功能材料与器件学报 . 2004(04)
稀土Nd掺杂纳米ZnO薄膜气敏特性 [J]. 李健,白素杰,通拉嘎. 传感器技术 . 2004(05)
Al doped ZnO thin films for gas sensor application [J] . I G Dimitrov,A O Dikovska,P A Atanasov,T R Stoyanchov,T Vasilev. Journal of Physics: Conference Series . 2008 (1)
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