JI Li1, YANG Jing2, LI Jian2. Effects of CeO2 doping on gas sensing properties of ZnO thin films[J]. 2011, 30(7): 60-63. DOI: 10.13873/j.1000-97872011.07.006.
CeO2掺杂对ZnO薄膜气敏特性的影响
摘要
ZnO薄膜进行CeO2掺杂
研究掺杂含量和热氧化对薄膜结构、表面、晶粒尺寸及气敏特性的影响。结果显示
用热蒸发制备的高纯Zn膜经500℃热氧化
获得c轴取向ZnO多晶薄膜。掺CeO2可抑制晶粒生长使颗粒细化平均粒径减小
同时改善了ZnO薄膜的体相化学计量比
Zn与O的比例从未掺杂时1∶1.28降到1∶1.191。XPS分析给出薄膜中Zn显+2价
O为-2价。掺CeO2(9%)可大大提高薄膜对乙醇和丙酮的敏感性
灵敏度分别达35和40。
Abstract
The doping effect of CeO2 in thin films structure
topography
grain size and gas sensing properties of ZnO thin films is investigated.The polycrystalline thin films with c-axis orientation can be obtained after thermal vacuum evaporation.The doping behavior can refine the grain size
simultaneously reduce the stoichiometric ratio from Zn∶O=1∶1.28 down to Zn∶O= 1∶1.191.The XPS results show that Zn existed as +2 and O as-2 states.Additionally
CeO2 doping can dramatically enhance the sensitivities to ethanol and acetone
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