QIAN Qun, ZHANG Cong-chun, YANG Chun-sheng, et al. Study on electric resistivity of thin film materials for GIGS solar cell[J]. 2011, 30(4): 22-24. DOI: 10.13873/j.1000-97872011.04.017.
In order to reduce electric resistivity of three-layer thin film materials and finally reduce series resistance of CIGS solar cell
improvements of sputtering technics for Mo
CIGS and n-ZnO have been investigated.Different samples are prepared at different fabricating conditions.The influences of sputtering air pressure
substrate temperature and anneal technique on electric resistivity and microstructure are given by analyzing test results.It has been testified that Mo gained by double-layer sputtering
CIGS gained at low sputtering air pressure with substrate heated and then annealed
n-ZnO gained when sputtering pressure is around 3
5
Pa have relatively better quality and lower electric resistivity.
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references
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