Hydrofluoric acid（HF）was widely used in wet etching operation to release Si-based micronano beams.However

corrosion of silicon may occur when silicon beam is electrically connected to Au Pad

which seriously damages the feature and performance of nano beams.According to the measurements of polarization curves of Au/Si in HF

galvanic etching was suggested to play a major role in the etching of Si.Galvanic etching can be alleviated by changing the Au/Si area ratio and HF solution content based on the experiments.In the end

HF vapor phase etching devices was designed to totally eliminate the galvanic cell etching and 120nm thickness two double-clamped nano beams was successfully fabricated by this method without structure damage.