氩氧比对ZnO薄膜特性的影响与紫外探测器的研制

吴跃波

doi:10.13873/j.1000-97872009.12.001

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氩氧比对ZnO薄膜特性的影响与紫外探测器的研制

设计与制造 | 更新时间：2025-09-11

- 氩氧比对ZnO薄膜特性的影响与紫外探测器的研制
- Effect of Ar/O₂ ratio on properties of ZnO film and development of ultraviolet photodetector
- 传感器与微系统 2009年28卷第12期页码：64-66
- 作者机构：
  
  安徽建筑工业学院机械与电气工程学院
- 作者简介：
- 基金信息：
- DOI：10.13873/j.1000-97872009.12.001
  中图分类号： O484.4
- 纸质出版：2009
- 稿件说明：
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[1]吴跃波.氩氧比对ZnO薄膜特性的影响与紫外探测器的研制[J].传感器与微系统,2009,28(12):64-66.

WU Yue-bo. Effect of Ar/O₂ ratio on properties of ZnO film and development of ultraviolet photodetector[J]. 2009, 28(12): 64-66.
[1]吴跃波.氩氧比对ZnO薄膜特性的影响与紫外探测器的研制[J].传感器与微系统,2009,28(12):64-66. DOI： 10.13873/j.1000-97872009.12.001.

WU Yue-bo. Effect of Ar/O₂ ratio on properties of ZnO film and development of ultraviolet photodetector[J]. 2009, 28(12): 64-66. DOI： 10.13873/j.1000-97872009.12.001.

摘要

利用射频磁控溅射技术在SiO2/n-Si和玻璃衬底上制备ZnO薄膜

研究了溅射气体氩氧比对薄膜特性的影响

在氩氧比为2∶3下所制备的ZnO薄膜c轴择优取向相对较好

薄膜的颗粒随氩氧比的增加而增大

所制备的薄膜在可见光均具有较高的透射率

吸收边在360

80 nm附近;并在以SiO2/n-Si为衬底

氩氧比为2∶3

经过退火处理的ZnO薄膜上制作Ag-ZnO-Ag肖特基MSM叉指结构的紫外探测器

所制作的探测器在5 V偏压下漏电流为3.3×10-8A

在紫外波段有较高的响应度

光响应度峰值在365 nm附近。

Abstract

ZnO films are deposited on SiO2/n-Si and glass by RF magnetron sputtering.The effect of Ar/O2 ratio on properties of ZnO film is studied.The ZnO film deposited under Ar/O2（2∶3） has a relatively better preferential c-axis orientation.The grain size augments with Ar/O2 ratio increasing.The films exhibit a high transmittance in visible region and have sharp fundamental absorption edge at about 360

80 nm.The interdigital metal-semiconductor-metal（MSM） ultraviolet（UV） photodetectors are fabricated by using Ag-ZnO-Ag as Schottky contact metal on the annealed ZnO films

which are deposited on SiO2/n-Si under Ar/O2 ratio（2∶3）.I-V characteristics of the MSM photodetector indicates that the leakage current is 3.3

×10-8A at a bias of 5 V.The photoresponsivity of the detector is high in the ultraviolet range and has a maximum value at about 365 nm.

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references

Structural characterization of ZnO thin films deposited by dc magnetron sputtering [J] . G. Kiriakidis,M. Suchea,S. Christoulakis,P. Horvath,T. Kitsopoulos,J. Stoemenos. Thin Solid Films . 2007 (24)

Ultraviolet photoconductive detector with high visible rejection and fast photoresponse based on ZnO thin film [J] . K.W. Liu,J.G. Ma,J.Y. Zhang,Y.M. Lu,D.Y. Jiang,B.H. Li,D.X. Zhao,Z.Z. Zhang,B. Yao,D.Z. Shen. Solid State Electronics . 2007 (5)

Effect of alumina doping on structural, electrical, and optical properties of sputtered ZnO thin films [J] . S.N. Bai,T.Y. Tseng. Thin Solid Films . 2006 (3)

Photoconductive ultraviolet detectors based on ZnO films [J] . X.G. Zheng,Q.Sh. Li,J.P. Zhao,D. Chen,B. Zhao,Y.J. Yang,L.Ch. Zhang. Applied Surface Science . 2006 (4)

ZnO MSM photodetectors with Ru contact electrodes [J] . T.K. Lin,S.J. Chang,Y.K. Su,B.R. Huang,M. Fujita,Y. Horikoshi. Journal of Crystal Growth . 2005 (2)

ZnO Schottky ultraviolet photodetectors [J] . S. Liang,H. Sheng,Y. Liu,Z. Huo,Y. Lu,H. Shen. Journal of Crystal Growth . 2001 (2)

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