WU Qing-xin1, CHEN Guang-hong1, YU Ying2, et al. Study on key fabrication process of RF MEMS switch with cantilever structure[J]. 2009, 28(9): 118-120.
WU Qing-xin1, CHEN Guang-hong1, YU Ying2, et al. Study on key fabrication process of RF MEMS switch with cantilever structure[J]. 2009, 28(9): 118-120. DOI: 10.13873/j.1000-97872009.09.001.
Co-planar wave-guide is coated with 2μm thick Au film.Polyimide is used as sacrificial layer.Si3N4 suspending membrane is grown by plasma enhanced chemical vapor deposition(PECVD).RF MEMS switch with cantilever structure is fabricated by the above processes.The key fabrication technology of RF MEMS switch is discussed including lift-off technology of Au film as co-planar wave-guide and fabrication process of suspending membrane.The optimum process parameters are obtained by different experiments.RF MEMS switch with cantilever structure with 12