The effect of impurity concentration of piezoresistor on the dynamic shock response of a high gn MEMS accelerometers at various piezoresistor temperatures is investigated by using finite element method（FEM）.Results show that the dynamic responses of component are the superposition of the forced vibration with dynamic shock and vibration of cantilever in its inherent frequency.When the working temperature of the piezoresistor is below 20℃

the inherent vibration of cantilever became outstanding

and with the increase of impurity concentration of piezoresistor

the peak output voltage decreased.When it is equal to 20℃

the peak output voltage is nearly invariable with the impurity concentration of piezoresistor.While it goes beyond 20℃

with the increase of working temperature of piezoresistor

the inherent vibration of cantilever becomes weaker and weaker

the output result gradually behaved as the forced vibration under dynamic shock and the peak output voltage increased with the increase of impurity concentration of piezoresistors.Under 0

20

100℃condition

the difference between the peak output voltage at 1×1018cm-3 impurity concentration of piezoresistor

and that at 1×1021cm-3 is about 2

0

9mV respectively.