YE Wei-guo1, PAN Hai-bo2. Study on oxygen absorption simulation and sensing characteristic for TiO2 surface[J]. 2007, (4): 28-30+33. DOI: 10.13873/j.1000-97872007.04.013.
The theoretical processes of the adsorbed O2 density with temperature and oxygen pressure are explained by a classical statistical theory and a theoretical model in the adsorption process according to Maxwell-Boltzmann distribution.The sensitized temperature for adsorbed oxygen on the TiO2 surface is in the region of 120
4
10 K under an active energy Ea=0.30 eV
and the optimal absorbed temperature is at 370 K.The results are close to the experimental nature
which the oxygen gas sensor is made by rutile TiO2 and optimal operating-temperature is at 378 K.And also
it is induced by computer simulation that the absorbed O2 density on the surface of semiconductor TiO2 increases linearly with oxygen pressure.
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references
The adsorption of small molecules on the TiO 2 anatase (101) surface by first-principles molecular dynamics [J] . Surface Science . 1998