The electricity and piezoresistive properties of the poly silicon films prepared by magnetron sputtering and low pressure chemical vapor deposition（LPCVD） are investigated

and also the influence of the crystallizing process on the characteristics of magnetron sputtering film alos is discussed.The experimental results indicate that the poly silicon film prepared by LPCVD has good stability and repeatability

and the gauge coefficient is up to 20.Correspondingly

structural characteristics of nanocrystalline silicon are analyzed by studying the film prepared by magnetron sputtering after appropriate crystallizing process

and the film’s gauge coefficient is up to 80.With using both the scanning electron microscope（SEM） photographs and testing results of resistivity and gauge coefficient

the feasibility of the poly silicon films prepared by two different ways applied to mechanical quantity sensors is discussed.