The effect of residual stress of polysilicon thin film upon microstructure is introduced

and the necessity on in-situ measurement of residual stress is analyzed.The principle of measurement of residual stress by T-shaped microstructure is stated.Based on single-T-shaped microstructures

double-T-shaped measurement microstructures are designed.The fabrication processing is discussed.The test chips are manufactured and measure data are gained with the scale microscope.The error modification formula is deduced

and the residual stress is calculated using MathCAD.It is pointed that double-T-shaped measurement microstructures can uprate measurement accuracy

and the manufacture implementation technique on in-situ measurement of residual stress in polysilicon thin film is given.